BF995 Vishay Telefunken, BF995 Datasheet - Page 2

• Manufacturer Part Number: BF995
• Description: N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
• Manufacturer: Vishay Telefunken

Electrical DC Characteristics
T
Electrical AC Characteristics
V
BF995
Vishay Telefunken
Drain - source
breakdown voltage
Gate 1 - source
breakdown voltage
Gate 2 - source
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
Drain current
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
Forward transadmittance
Gate 1 input capacitance
Gate 2 input capacitance
Feedback capacitance
Output capacitance
Power gain
AGC range
Noise figure
www.vishay.de FaxBack [phone]
2 (7)
amb
DS
= 15 V, I
= 25 _ C, unless otherwise specified
Parameter
Parameter
D
= 10 mA, V
I
V
V
V
D
I
I
V
V
DS
DS
DS
DS
G1S
G2S
= 10
G1S
G2S
G2S
= 15 V, V
= 15 V, V
= 15 V, V
= 10 mA, V
= 10 mA, V
V
G
V
G
= 5 V, V
= 5 V, V
m
= 4 V, f = 1 MHz , T
G1S
G2S
S
S
A, –V
Test Conditions
= 2 mS, G
= 2 mS, G
= 0, V
= 4 to –2 V, f = 200 MHz
G1S
G1S
G2S
G1S
G1S
G2S
G1S
G2S
G1S
= 0, V
= 4 V, I
= 0, I
G2S
= –V
Test Conditions
= V
= V
L
L
= V
= V
= 0.5 mS, f = 200 MHz
= 0.5 mS, f = 200 MHz
= 4 V
D
DS
DS
G2S
G2S
G2S
DS
DS
D
= 20
= 0
= 0
= 20
amb
= 4 V
= 0
= 0
= 4 V
m
= 25 _ C, unless otherwise specified
A
m
A
BF995A
BF995B
BF995
Type
–V
–V
V
V
Symbol
Symbol
V
C
C
D
(BR)G1SS
(BR)G2SS
G1S(OFF)
G2S(OFF)
C
y
C
G
(BR)DS
I
I
I
I
I
issg1
issg2
G
DSS
DSS
DSS
21s
G1SS
G2SS
oss
F
rss
ps
ps
Min
12
Min
9.5
20
8
8
4
4
Document Number 85009
Typ
3.7
1.6
1.6
1.8
Typ
15
25
20
50
Rev. 3, 20-Jan-99
Max Unit
10.5
Max Unit
100
100
3.5
3.5
2.5
14
14
18
18
mA
mA
mA
mS
nA
nA
pF
pF
pF
dB
dB
dB
fF
V
V
V
V
V