BF1205 Philips Semiconductors, BF1205 Datasheet - Page 10

• Manufacturer Part Number: BF1205
• Description: Dual N-channel dual gate MOS-FET
• Manufacturer: Philips Semiconductors

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Philips Semiconductors
2003 Sep 30
handbook, halfpage
reduction
Dual N-channel dual gate MOS-FET
gain
(dB)
V
Fig.11 Gain reduction as a function of AGC
DS
(a) = V
20
40
60
0
0
voltage; typical values; amplifier a.
DS
(b) = 5 V; V
1
G1-S
R GEN
50
(b) = 0 V; f = 50 MHz; see Fig.13.
V i
2
Fig.13 Cross-modulation test set-up for amplifier a.
50
3
V AGC (V)
50
MGX438
4.7 nF
4.7 nF
4.7 nF
4
V AGC
V GG
0 V
10 k
g1 (a)
g1 (b)
R G1
150 k
g2
10
BF1205
handbook, halfpage
V
see Fig.13.
Fig.12 Drain current as a function of gain
(mA)
DS
I D
(a) = V
d (a)
s
d (b)
16
12
8
4
0
0
V DS (a)
V DS (b)
reduction; typical values; amplifier a.
5 V
5 V
DS
4.7 nF
4.7 nF
4.7 nF
L1
2.2 H
L2
2.2 H
(b) = 5 V; V
MGX440
20
R L
50
G1-S
(b) = 0 V; f = 50 MHz; T
gain reduction (dB)
40
Product specification
BF1205
MGX439
amb
= 25 C;
60