BF1215 Philips Semiconductors, BF1215 Datasheet - Page 10

• Manufacturer Part Number: BF1215
• Description: Dual N-channel dual gate MOSFET
• Manufacturer: Philips Semiconductors

NXP Semiconductors
Table 9.
V
BF1215_1
Product data sheet
f (MHz)
50
100
200
300
400
500
600
700
800
900
1000
DS(A)
= 5 V; V
Scattering parameters for amplifier A
s
Magnitude
(ratio)
0.992
0.991
0.986
0.977
0.966
0.952
0.936
0.920
0.902
0.881
0.861
G2-S
11
8.2 Scattering parameters for amplifier A
8.3 Noise data for amplifier A
= 4 V; I
Table 10.
V
unless otherwise specified.
f (MHz)
400
800
Fig 15. Amplifier A output admittance as a function of frequency; typical values
D(A)
DS(A)
Angle
(degree)
−4.61
−8.79
−17.57
−26.11
−34.46
−42.75
−50.92
−58.79
−66.40
−73.87
−81.10
= 19 mA; V
= 5 V; V
V
DS(A)
Noise data for amplifier A
G2-S
= 5 V; V
DS(B)
s
Magnitude
(ratio)
2.80
2.80
2.77
2.74
2.69
2.64
2.58
2.50
2.43
2.36
2.28
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21
= 4 V; I
NF
0.9
1.4
= 0 V; V
b
min
os
(mS)
G2-S
10
10
, g
10
D(A)
−1
−2
Rev. 01 — 6 May 2010
os
(dB)
1
= 4 V; V
10
G1-S(B)
Angle
(degree)
175.87
172.12
164.25
156.52
148.98
141.49
134.13
127.01
120.04
113.24
106.69
= 19 mA; V
DS(B)
= 0 V; T
= V
Γ
(ratio)
0.810
0.697
opt
DS(B)
G1-S(B)
s
Magnitude
(ratio)
0.00078
0.00145
0.00292
0.00415
0.00528
0.00620
0.00691
0.00733
0.00758
0.00763
0.00749
amb
12
= 0 V; V
10
= 0 V; I
= 25
2
b
g
os
os
°
C; typical values.
D(A)
G1-S(B)
f (MHz)
Dual N-channel dual gate MOSFET
Angle
(degree)
95.65
83.73
78.53
73.60
69.27
64.79
60.71
57.37
54.40
52.13
50.46
= 19 mA; T
(degree)
27.95
56.50
= 0 V; T
001aal561
10
j
= 25 °C.
amb
3
s
Magnitude
(ratio)
0.993
0.994
0.992
0.991
0.989
0.986
0.984
0.982
0.979
0.978
0.976
22
= 25
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www.DataSheet4U.com
°
C; typical values;
r
0.884
0.717
n
BF1215
(ratio)
Angle
(degree)
−1.38
−2.76
−5.50
−8.21
−10.91
−13.58
−16.22
−18.86
−21.47
−24.00
−26.55
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