BF1215 Philips Semiconductors, BF1215 Datasheet - Page 13

• Manufacturer Part Number: BF1215
• Description: Dual N-channel dual gate MOSFET
• Manufacturer: Philips Semiconductors

NXP Semiconductors
BF1215_1
Product data sheet
Fig 22. Amplifier B drain current as a function of gate1
(mA)
I
(1) R
(2) R
(3) R
(4) R
(5) R
D
40
30
20
10
0
0
V
connected to V
supply voltage and drain supply voltage;
typical values
G1
G1
G1
G1
G1
G2-S
= 12 kΩ.
= 27 kΩ.
= 39 kΩ.
= 67 kΩ.
= 80 kΩ.
= 4 V; V
1
DS(A)
GG
; see
2
= V
G1-S(A)
Figure
3
= 0 V; T
2.
(1)
V
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GG
4
j
001aal568
= 25 °C; R
= V
DS
(2)
(3)
(4)
(5)
(V)
5
Rev. 01 — 6 May 2010
G1
is
Fig 23. Amplifier B drain current as a function of gate2
(mA)
I
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
D
40
30
20
10
0
0
V
R
voltage; typical values
GG
GG
GG
GG
GG
GG
DS(B)
G1
= 39 kΩ (connected to V
= 4.0 V.
= 3.5 V.
= 3.0 V.
= 2.5 V.
= 2.0 V.
= 1.5 V.
= 5 V; V
1
Dual N-channel dual gate MOSFET
(6)
DS(A)
(5)
2
(4)
= V
(3)
(2)
G1-S(A)
(1)
3
GG
= 0 V; T
); see
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4
V
001aal569
Figure
BF1215
j
G2-S
= 25 °C;
(V)
2.
5
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