ATF501P8 Agilent(Hewlett-Packard), ATF501P8 Datasheet - Page 3
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ATF501P8
Manufacturer Part Number
ATF501P8
Description
Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package
Manufacturer
Agilent(Hewlett-Packard)
Datasheet
1.ATF501P8.pdf
(20 pages)
3
ATF-501P8 Electrical Specifications
T
Symbol
Vgs
Vth
Idss
Gm
Igss
NF
G
OIP3
P1dB
PAE
ACLR
Notes:
1. Measurements at 2 GHz obtained using production test board described in Figure 2 while measurement at 0.9GHz obtained from load pull tuner.
2. i ) 2 GHz OIP3 test condition: F1 = 2.0 GHz, F2 = 2.01 GHz and Pin = -5 dBm per tone.
3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
4. Use proper bias, board, heatsinking and derating designs to ensure max channel temperature is not exceeded.
Input
Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE measurements at 2 GHz. This circuit achieves a
trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
A
ii ) 900 MHz OIP3 test condition: F1 = 900 MHz, F2 = 910 MHz and Pin = -5dBm per tone.
- Test Model 1
- Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
- Freq = 2140 MHz
- Pin = -5 dBm
- Channel Integrate Bandwidth = 3.84 MHz
See absolute max ratings and application note for more details.
= 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 280 mA unless otherwise specified.
Transmission
(0.3 dB loss)
Drain Bias T
Parameter and Test Condition
Operational Gate Voltage
Threshold Voltage
Saturated Drain Current
Transconductance
Gate Leakage Current
Noise Figure
Gain
Output 3
Output 1dB Compressed
Power Added Efficiency
Adjacent Channel Leakage
Power Ratio
Line and
50 Ohm
[1]
rd
Order Intercept Point
[1,3]
[1]
[1]
[1]
Γ_ang=-164°
Γ_mag=0.79
(1.1 dB loss)
Matching
Circuit
Input
[1,2]
Vds = 4.5V, Ids = 280 mA
Vds = 4.5V, Ids = 32 mA
Vds = 4.5V, Vgs = 0V
Vds = 4.5V, Gm = ∆Ids/∆Vgs;
∆Vgs = Vgs1 – Vgs2
Vgs1 = 0.55V, Vgs2 = 0.5V
Vds = 0V, Vgs = -4.5V
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
Offset BW = 5 MHz
Offset BW = 10 MHz
DUT
Γ_ang=-163°
Γ_mag=0.69
(0.9 dB loss)
Matching
Output
Circuit
Units
V
µA
mmho
µA
dB
dB
dB
dBm
dBm
dBm
dBm
%
%
dBc
dBc
V
dB
Min.
0.42
—
—
—
-30
—
—
13.5
—
43
—
27.5
—
50
—
—
—
Transmission
(0.3 dB loss)
Drain Bias T
Line and
50 Ohm
Typ.
0.55
0.33
5
1872
-0.8
1
—
15
16.6
45.5
42
29
27.3
65
49
63.9
64.1
Max.
—
—
—
—
—
—
16.5
—
—
—
—
—
—
—
—
—
0.67
Output