ATF501P8 Agilent(Hewlett-Packard), ATF501P8 Datasheet - Page 4
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ATF501P8
Manufacturer Part Number
ATF501P8
Description
Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package
Manufacturer
Agilent(Hewlett-Packard)
Datasheet
1.ATF501P8.pdf
(20 pages)
4
RF Input
Figure 3. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in
gate supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown.
Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions
The device’s optimum OIP3 and P1dB measurements were determined using a load pull system at 4.5V,
400 mA quiesent bias:
Typical Gammas at Optimum OIP3
Freq
(GHz)
0.9
2.0
2.4
3.9
Typical Gammas at Optimum P1dB
Freq
(GHz)
0.9
2.0
2.4
3.9
49.15
48.18
47.54
45.44
1.8 nH
OIP3
OIP3
41.78
43.28
43.46
42.94
2.2 µF
1.2 pF
Supply
Gate
16.85
14.72
12.47
8.05
15 nH
15 Ohm
Gain
Gain
21.84
14.83
11.90
7.70
50 Ohm
.02
27.86
29.36
29.10
28.49
P1dB
P1dB
31.23
31.03
30.66
29.56
110 Ohm
.03
Optimized for maximum OIP3
Optimized for maximum P1dB
44.20
48.89
46.83
37.02
PAE
PAE
49.97
44.78
41.00
33.06
DUT
0.5852<-135.80
0.7267<-175.37
0.6155<-171.71
0.7888<-148.43
110 Ohm
.03
Gamma Source
Gamma Source
0.7765<168.50
0.8172<-175.74
0.8149<-163.78
0.8394<-151.21
50 Ohm
.02
2.2 µF
0.4785<177.00
0.7338<179.56
0.5411<-172.02
0.5247<-145.84
Supply
Drain
1.2 pF
47 nH
3.3 nH
RF Output
Gamma Load
Gamma Load
0.7589<-175.09
0.8011<-165.75
0.8042<-161.79
0.7826<-149.00