MW6S010 Freescale Semiconductor, MW6S010 Datasheet - Page 11

• Manufacturer Part Number: MW6S010
• Description: RF Power Field Effect Transistor
• Manufacturer: Freescale Semiconductor

RF Device Data
Freescale Semiconductor
30
25
20
15
10
5
50
100 150 200 250 300 350 400 450 500
V
P
I
Figure 18. Broadband Frequency Response
DQ
DD
out
= 150 mA
= 28 Vdc
= 10 W
S11
S21
Figure 17. 2 - Carrier W - CDMA Broadband Performance @ P
Figure 16. 2 - Carrier W - CDMA Broadband Performance @ P
f, FREQUENCY (MHz)
20.4
20.2
19.8
19.6
19.4
19.2
18.8
18.6
18.4
18.8
18.5
18.3
17.8
17.5
17.3
16.8
16.5
20
19
19
18
17
400
400
η
η
ALT1
D
D
ALT1
410
410
TYPICAL CHARACTERISTICS
420
420
V
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
DD
IRL
550 600
= 28 Vdc, P
V
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
430
430
IRL
DD
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
= 28 Vdc, P
440
440
out
650
G
= 7.5 W (Avg.), I
ps
0
−5
−10
−15
−20
−25
ACPR
out
450
450
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
= 3 W (Avg.), I
G
ACPR
ps
0.1
460
460
V
f = 450 MHz, N−CDMA IS−95 Pilot,
Sync, Paging, Traffic Codes 8
Through 13
Figure 19. Single - Carrier N - CDMA ACPR, ALT1
DQ
DD
470
470
DQ
= 150 mA
= 28 Vdc, I
= 150 mA
— 450 MHz
480
480
and ALT2 versus Output Power
DQ
P
out
490
490
= 150 mA,
, OUTPUT POWER (WATTS) AVG.
500
500
out
out
37
34
31
28
25
55
50
45
40
35
1
−40
−45
−50
−55
−60
−30
−35
−40
−45
−50
−65
−55
= 7.5 Watts Avg.
= 3 Watts Avg.
−6
−9
−12
−15
−18
−4
−6
−8
−10
−12
−21
−14
10
ACPR
ALT2
ALT1
−10
−20
−30
−40
−50
−60
−70
−80
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