MW6S010 Freescale Semiconductor, MW6S010 Datasheet - Page 8

• Manufacturer Part Number: MW6S010
• Description: RF Power Field Effect Transistor
• Manufacturer: Freescale Semiconductor

MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
8
Z
source
f = 800 MHz
Figure 13. Series Equivalent Source and Load Impedance — 900 MHz
f = 980 MHz
Z
Z
source
load
Input
Matching
Network
MHz
800
820
840
860
880
900
920
940
960
980
f
V
DD
f = 800 MHz
= Test circuit impedance as measured from
= Test circuit impedance as measured
= 28 Vdc, I
Z
o
gate to ground.
from drain to ground.
= 25 Ω
f = 980 MHz
Z
source
3.1 + j1.9
2.8 + j1.7
2.7 + j2.2
3.1 + j3.4
3.3 + j3.8
2.9 + j3.7
2.8 + j4.4
3.0 + j4.7
3.2 + j4.9
3.6 + j5.2
Z
Z
DQ
source
load
Ω
= 125 mA, P
Device
Under
Test
out
= 10 W PEP
Z
load
10.1 + j2.3
10.6 + j5.6
10.1 + j5.9
11.0 + j6.4
11.8 + j6.6
12.1 + j7.1
8.3 + j2.5
8.2 + j3.3
9.8 + j4.8
9.5 + j5.5
Z
load
Ω
Output
Matching
Network
Freescale Semiconductor
RF Device Data