2SA2167 Isahaya Electronics Corporation, 2SA2167 Datasheet

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2SA2167

Manufacturer Part Number
2SA2167
Description
SILICON PNP EPITAXIAL TYPE
Manufacturer
Isahaya Electronics Corporation
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SA2167
Manufacturer:
IDC
Quantity:
20 000
Company:
Part Number:
2SA2167-T111-1E
Quantity:
1 000
www.datasheet4u.com
DESCRIPTION
It is designed with high voltage, high Collector current,
high Collector dissipation.
FEATURE
●High voltage V
●High Collector current I
●Low Collector to Emitter saturation voltage
●High Collector dissipation PC=500mW
APPLICATION
MAXIMUM RATINGS(Ta=25℃)
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
V
V
V
2SA2167 is a silicon PNP epitaxial type transistor.
V
Symbol
V
V
V
Audiovisual apparatus, VTR, Relay drive
(BR)CBO
T
(BR)EBO
(BR)CEO
I
P
CE(sat)
I
CBO
EBO
CEO
I
CM
T
I
V
C
h
C
stg
CBO
EBO
f
C
j
FE
CE(sat)
T
ob
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation
Junction temperature
Storage temperature
=0.5VMax (@I
Collector to Base brake down voltage
Emitter to Base brake down voltage
Collector to Emitter brake down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
Collector to Emitter saturation voltage
Gain band width product
Collector output capacitance
CEO
=-60V
Parameter
C
C
=-1A/IB=-50mA)
Parameter
=-2A
ISAHAYA ELECTRONICS CORPORATION
-55∼150
Ratings
-60
500
150
-60
-6
-2
-3
MARKING
IC=-2mA、RBE=∞
VCB=-50V、IE=0mA
VCE=-4V、IC=-100mA
VCB=10V、IE=0mA、f=1MHz
IC=-10uA、IE=0mA
IE=-10uA、IC=0mA
VEB=-4V、IC=0mA
IC=-1A、IB=-50mA
VCE=-2V、IE=10mA
h
FE
Unit
mW
V
V
V
A
A
Test condition
55∼110
OUTLINE DRAWING
MARKING
TERMINAL CONNECTOR
①:BASE
②:EMITTER
③:COLLECTOR
C
FOR HIGH CURRENT DRIVE APPLICATION
E
Lot No.
1.5
4.6MAX
1.6
3.0
C
90∼180
SILICON PNP EPITAXIAL TYPE
MAX
0.53
-60
-60
Min
-6
55
D
A L
B
0.48MAX
D
Limits
-0.2
Typ
65
23
2SA2167
JEITA:SC-62
JEDEC:SOT-89
TYPE NAME
hFE ITEM
150∼300
Max
-0.2
-0.2
-0.5
300
E
MARKING
マーキング
1.5
0.4
Unit:mm
MHz
Unit
μA
μA
pF
V
V
V
V

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2SA2167 Summary of contents

Page 1

... DESCRIPTION www.datasheet4u.com 2SA2167 is a silicon PNP epitaxial type transistor designed with high voltage, high Collector current, high Collector dissipation. FEATURE ●High voltage V =-60V CEO ●High Collector current I =-2A C ●Low Collector to Emitter saturation voltage V =0.5VMax (@I =-1A/IB=-50mA) CE(sat) ...

Page 2

... AMBIENT TEMPERATURE Ta[℃] -100 -1000 -10000 10 100 75 100 125 150 ISAHAYA ELECTRONICS CORPORATION 2SA2167 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE COLLECTOR TO EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT -1000 Ta=25℃ IC/IB=20/1 -100 - -10 -100 -1000 COLLECTOR CURRENT IC[mA] COLLECTOR OUTPUT CAPATITANCE VS ...

Page 3

... ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. · The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. · ...

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