2SA887 Inchange Semiconductor, 2SA887 Datasheet

2SA887

Manufacturer Part Number

2SA887

Description

POWER TRANSISTOR

Manufacturer

Inchange Semiconductor

Datasheet

1.2SA887.pdf (3 pages)

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Download datasheet (149Kb)

Inchange Semiconductor

Silicon PNP Power Transistors

DESCRIPTION

·With TO-202 package

·Complement to type 2SC1848

APPLICATIONS

·Medium power amplifier

PINNING(see Fig.2)

Absolute maximum ratings (Ta=25

SYMBOL

CBO

CEO

EBO

stg

Base

Collector

Emitter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector current-peak

Collector power dissipation

Junction temperature

Storage temperature

DESCRIPTION

PARAMETER

℃)

Open emitter

Open base

Open collector

=25℃

Fig.1 simplified outline (TO-202) and symbol

CONDITIONS

Product Specification

-55~150

VALUE

150

-70

-50

1.2

-5

-2

-3

2SA887

UNIT

℃

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2SA887 Summary of contents

Page 1

... Collector power dissipation C T Junction temperature j T Storage temperature stg Fig.1 simplified outline (TO-202) and symbol ℃) CONDITIONS Open emitter Open base Open collector T =25℃ =25℃ C Product Specification 2SA887 VALUE UNIT - ℃ 150 ℃ -55~150 ...

Page 2

... =-2A ;I =-0 =-100mA ; =-40V =-20V =-5V =0. =- Product Specification 2SA887 MIN TYP. MAX UNIT -50 V -70 V -0.6 -1.2 V -1.0 -1 220 μA -1.0 μA -100 μA -10 150 MHz ...

Page 3

... Inchange Semiconductor Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 Product Specification 2SA887 ...

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