2SA887 Inchange Semiconductor, 2SA887 Datasheet - Page 2

• Manufacturer Part Number: 2SA887
• Description: POWER TRANSISTOR
• Manufacturer: Inchange Semiconductor

Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
V
50-100
V
V
(BR)CEO
(BR)CBO
h
h
I
I
I
CEsat
BEsat
CBO
CEO
EBO
FE-1
FE-2
f
P
T
h
FE-2
Classifications
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
DC current gain
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Transition frequency
80-160
Q
PARAMETER
120-220
R
I
I
I
I
I
V
V
V
I
I
C
C
C
C
C
C
E
CB
CE
EB
=0.5A ; V
=-10mA; I
=-1mA; I
=-1A ;I
=-2A ;I
=-100mA ; V
=-1A ; V
=-5V; I
=-40V; I
=-20V; I
2
B
B
CONDITIONS
=-0.1A
B
=-0.2 A
B
CE
C
E
CB
=0
=0
E
B
B
=-5V
=0
=0
=0
=-5V
CE
=-5V
MIN
Product Specification
-50
-70
30
50
TYP.
-0.6
-1.0
150
2SA887
MAX
-100
-1.2
-1.5
-1.0
220
-10
UNIT
MHz
μA
μA
μA
V
V
V
V