BFQ149 Philips Semiconductors, BFQ149 Datasheet - Page 2

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BFQ149

Manufacturer Part Number
BFQ149
Description
PNP 5 GHz wideband transistor
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
DESCRIPTION
PNP transistor in a SOT89 envelope.
It is intended for use in
UHF applications such as broadband
aerial amplifiers (30 to 860 MHz) and
in microwave amplifiers such as radar
systems, spectrum analyzers, etc.,
using SMD technology.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
September 1995
V
I
P
h
f
G
F
V
V
V
I
I
P
T
T
SYMBOL
SYMBOL
C
T
C
CM
FE
stg
j
CEO
tot
CBO
CEO
EBO
tot
PNP 5 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
noise figure
PARAMETER
PARAMETER
PINNING
PIN
1
2
3
open base
up to T
I
I
f = 500 MHz; T
I
f = 500 MHz; T
I
R
T
open emitter
open base
open collector
f
up to T
C
C
C
C
amb
s
emitter
collector
base
= 70 mA; V
= 75 mA; V
= 50 mA; V
= 50 mA; V
= 60
1 MHz
Code: FG
= 25 C
DESCRIPTION
s
s
= 135 C (note 1)
= 135 C (note 1)
2
f = 500 MHz;
CONDITIONS
CONDITIONS
j
amb
CE
CE
CE
CE
= 25 C
= 10 V; T
= 10 V;
= 10 V;
= 10 V;
= 25 C
j
= 25 C 20
fpage
4
MIN.
65
MIN.
Bottom view
Fig.1 SOT89.
Product specification
1
50
5
12
3.75
TYP.
1
150
150
20
15
3
100
150
MAX.
2
BFQ149
1
MAX. UNIT
MBK514
15
100
3
V
V
V
mA
mA
W
C
C
UNIT
V
mA
W
GHz
dB
dB

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