BFQ149 Philips Semiconductors, BFQ149 Datasheet - Page 3

• Manufacturer Part Number: BFQ149
• Description: PNP 5 GHz wideband transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL RESISTANCE
Note
1. T
CHARACTERISTICS
T
Note
1. G
September 1995
SYMBOL
R
I
h
f
C
C
C
G
F
SYMBOL
j
CBO
T
FE
th j-s
= 25 C unless otherwise specified.
c
e
re
PNP 5 GHz wideband transistor
UM
G
s
UM
UM
is the temperature at the soldering point of the collector tab.
is the maximum unilateral power gain, assuming S
=
10
thermal resistance from junction to
soldering point
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain
(note 1)
noise figure
log
------------------------------------------------------------- - dB.
1
–
S
PARAMETER
11
PARAMETER
S
2
21
1
2
–
S
22
2
I
I
I
f = 500 MHz; T
I
I
I
I
f = 500 MHz; T
I
R
T
E
C
C
E
C
C
C
C
amb
s
= 0; V
= 0; V
= 70 mA; V
= 70 mA; V
= 0; V
= 0; V
= 50 mA; V
= 50 mA; V
up to T
= 60
= 25 C
3
12
CB
CB
EB
CE
is zero and
s
CONDITIONS
CONDITIONS
= 10 V;
= 10 V; f = 1 MHz
= 0.5 V; f = 1 MHz
= 10 V; f = 1 MHz
f = 500 MHz;
= 135 C (note 1)
amb
amb
CE
CE
CE
CE
= 10 V
= 10 V;
= 10 V;
= 10 V;
= 25 C
= 25 C
THERMAL RESISTANCE
20
4
MIN. TYP. MAX.
50
5
2
4
1.7
12
3.75
Product specification
40 K/W
BFQ149
100
nA
GHz
pF
pF
pF
dB
dB
UNIT