BF410A Philips Semiconductors, BF410A Datasheet - Page 3

• Manufacturer Part Number: BF410A
• Description: N-channel silicon field-effect transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
STATIC CHARACTERISTICS
T
December 1990
Drain-source voltage
Drain-gate voltage (open source)
Drain current (DC or average)
Gate current
Total power dissipation up to T
Storage temperature range
Junction temperature
From junction to ambient in free air
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
amb
N-channel silicon field-effect transistors
I
V
I
S
D
V
DS
= 25 C
= 0; I
= 10 A; V
GS
= 10 V; V
= 0.2 V; V
D
= 10 A
DS
GS
DS
= 10 V
= 0
= 0
amb
= 75 C
I
DSS
I
V
V
3
GSS
(BR)GDO
(P)GS
max.
min.
min.
max.
typ.
BF410A
V
V
I
P
T
T
R
D
stg
j
DS
DGO
tot
th j-a
I
G
0.7
3.0
0.8
10
20
B
2.5
7.0
1.5
10
20
BF410A to D
max.
max.
max.
max.
max.
max.
=
Product specification
65 to 150
C
2.2
10
20
12
6
300 mW
150
250 K/W
20 V
20 V
30 mA
10 mA
D
10
20
10 mA
18 mA
3 V
C
C
nA
V