BF410A Philips Semiconductors, BF410A Datasheet - Page 4

• Manufacturer Part Number: BF410A
• Description: N-channel silicon field-effect transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
DYNAMIC CHARACTERISTICS
December 1990
handbook, halfpage
Measuring conditions (common source):
y-parameters (common source)
Input capacitance at f = 1 MHz
Input conductance at f = 100 MHz
Feedback capacitance at f = 1 MHz
Transfer admittance at f = 1 kHz
Transfer admittance at f = 100 MHz
Output capacitance at f = 1 MHz
Output conductance at f = 1 MHz
Output conductance at f = 100 MHz
Noise figure at optimum source admittance
N-channel silicon field-effect transistors
V
G
Fig.2
GS
S
(pF)
C rs
= 1 mS; B
1.5
0.5
= 0 instead of I
1
0
0
I
f = 1 MHz; T
V
D
GS
= 5 mA for BF410C and BF410D;
= 0 for BF410A and BF410B;
4
S
= 3 mS; f = 100 MHz
typ
D
amb
= 5 mA
8
= 25 C.
12
16
V DS (V)
MDA277
20
V
V
C
g
C
C
g
g
F
is
os
os
DS
DS
y
y
y
is
rs
os
fs
fs
fs
= 10 V; V
= 10 V; I
max.
typ.
typ.
max.
min.
min.
typ.
max.
max.
typ.
typ.
4
D
GS
handbook, halfpage
= 5 mA; T
Fig.3 V
BF410A
= 0; T
(mA/V)
y fs
10
8
6
4
2
0
100
0.5
0.7
2.5
3.5
1.5
amb
0
60
35
DS
BF410A
5
3
amb
10 V; f = 1 kHz; T
= 25 C for BF410A and B
= 25 C for BF410C and D
B
0.5
0.7
4.0
5.5
1.5
90
80
55
5
3
BF410B
5
C
100
0.5
0.7
4.0
6.0
5.0
1.5
BF410C
amb
60
70
5
3
= 25 C; typical values.
10
BF410A to D
Product specification
D
120
0.5 pF
0.7 pF
3.5 mS
7.0 mS
5.0 mS
1.5 dB
I D (mA)
50
90
5 pF
3 pF
BF410D
MDA278
S
S
S
15