CR02AM-8A Mitsubishi Electric Semiconductor, CR02AM-8A Datasheet - Page 4

• Manufacturer Part Number: CR02AM-8A
• Description: LOW POWER USE GLASS PASSIVATION TYPE
• Manufacturer: Mitsubishi Electric Semiconductor

160
140
120
100
160
140
120
100
160
140
120
100
ALLOWABLE AMBIENT TEMPERATURE VS.
ALLOWABLE AMBIENT TEMPERATURE VS.
ALLOWABLE AMBIENT TEMPERATURE VS.
80
60
40
20
80
60
40
20
80
60
40
20
0
0
0
0
0
0
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT
AVERAGE ON-STATE CURRENT
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
(SINGLE-PHASE FULL WAVE)
0.1
0.1
= 30° 60°
(RECTANGULAR WAVE)
= 30°
0.1
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
0.2
0.2
60°
90°
0.2
= 30°
RESISTIVE LOADS
NATURAL
CONVECTION
90°
60°
120°
0.3
0.3
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
120°
90°
360°
120°
360°
0.3
180°
180°
0.4
0.4
180°
360°
270°
DC
0.4
0.5
0.5
MITSUBISHI SEMICONDUCTOR THYRISTOR
160
140
120
100
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
MAXIMUM AVERAGE POWER DISSIPATION
MAXIMUM AVERAGE POWER DISSIPATION
80
60
40
20
0
0
0
–40
0
0
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
–20
JUNCTION TEMPERATURE (°C)
(SINGLE-PHASE FULL WAVE)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
0.1
0.1
(RECTANGULAR WAVE)
0
= 30°
20
= 30°
60°
0.2
0.2
40
90°
TYPICAL EXAMPLE
60°
60
GLASS PASSIVATION TYPE
RESISTIVE LOADS
120°
0.3
0.3
80
90°
180°
RESISTIVE,
INDUCTIVE
LOADS
100
120°
CR02AM-8A
360°
R
LOW POWER USE
270°
GK
120 140
0.4
0.4
180°
360°
= 1k
DC
160
0.5
0.5
Feb.1999