PBSS305PD Philips Semiconductors, PBSS305PD Datasheet

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PBSS305PD

Manufacturer Part Number
PBSS305PD
Description
2 A PNP low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
PNP low V
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS305ND.
I
I
I
I
I
I
I
I
I
I
I
Table 1.
[1]
[2]
Symbol Parameter
V
I
I
R
C
CM
CEO
CEsat
PBSS305PD
100 V, 2 A PNP low V
Rev. 01 — 30 May 2006
Low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter
Automotive applications
Device mounted on a ceramic PCB, Al
Pulse test: t
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
CEsat
Quick reference data
p
Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
300 s;
0.02.
CEsat
FE
Conditions
open base
single pulse;
t
I
I
) at high I
p
C
B
2
O
C
= 200 mA
= 2 A;
3
, standard footprint.
and I
1 ms
(BISS) transistor
CM
C
CEsat
[1]
[2]
Min
-
-
-
-
Typ
-
-
-
88
Product data sheet
Max
125
www.DataSheet4U.com
100
2
3
Unit
V
A
A
m

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PBSS305PD Summary of contents

Page 1

... PBSS305PD 100 PNP low V Rev. 01 — 30 May 2006 1. Product profile 1.1 General description PNP low V small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS305ND. 1.2 Features I Low collector-emitter saturation voltage V I High collector current capability I I High collector current gain (h I High efficiency due to less heat generation ...

Page 2

... Ordering information Package Name Description SC-74 plastic surface-mounted package (TSOP6); 6 leads Marking codes Marking code AK Rev. 01 — 30 May 2006 www.DataSheet4U.com PBSS305PD 100 PNP low V (BISS) transistor CEsat Simplified outline Symbol © Koninklijke Philips Electronics N.V. 2006. All rights reserved. ...

Page 3

... T amb junction temperature ambient temperature storage temperature O , standard footprint ms Rev. 01 — 30 May 2006 www.DataSheet4U.com PBSS305PD 100 PNP low V (BISS) transistor CEsat Min Max - 100 - 100 - ...

Page 4

... O , standard footprint Thermal characteristics Conditions in free air O , standard footprint ms Rev. 01 — 30 May 2006 PBSS305PD (BISS) transistor CEsat 006aaa270 75 125 175 amb Min Typ Max [ 350 [ 208 ...

Page 5

... Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS305PD_1 Product data sheet Rev. 01 — 30 May 2006 www.DataSheet4U.com PBSS305PD 100 PNP low V (BISS) transistor CEsat 006aaa271 (s) p 006aaa272 ...

Page 6

... Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS305PD_1 Product data sheet Rev. 01 — 30 May 2006 www.DataSheet4U.com PBSS305PD 100 PNP low V (BISS) transistor CEsat 006aaa273 (s) p 006aaa751 ...

Page 7

... 0 Bon Boff 100 MHz = MHz 300 s; 0.02. p Rev. 01 — 30 May 2006 PBSS305PD (BISS) transistor CEsat Min Typ Max = 100 = 100 - - 100 175 ...

Page 8

... I (mA (1) T (2) T (3) T Fig 9. Base-emitter saturation voltage as a function of collector current; typical values Rev. 01 — 30 May 2006 www.DataSheet4U.com PBSS305PD 100 PNP low V (BISS) transistor CEsat 006aaa744 I = 750 mA B 675 600 525 450 375 225 300 150 ...

Page 9

... I ( Fig 13. Collector-emitter saturation resistance as a function of collector current; typical values Rev. 01 — 30 May 2006 www.DataSheet4U.com PBSS305PD 100 PNP low V (BISS) transistor CEsat 006aaa748 (1) (2) ( (mA amb ...

Page 10

... (probe) oscilloscope 450 Bon Boff Rev. 01 — 30 May 2006 www.DataSheet4U.com PBSS305PD (BISS) transistor CEsat input pulse (idealized waveform) I (100 %) Bon I Boff output pulse (idealized waveform 006aaa266 off ...

Page 11

... Dimensions in mm Packing methods Package Description SOT457 4 mm pitch tape and reel pitch tape and reel; T2 Rev. 01 — 30 May 2006 www.DataSheet4U.com PBSS305PD 100 PNP low V (BISS) transistor CEsat 1.1 0.9 4 0.6 0.2 3 0.40 0.26 0.25 0.10 04-11-08 [1] Packing quantity 3000 [2] -115 ...

Page 12

... PBSS305PD_1 Product data sheet 100 PNP low V 3.45 1.95 0.95 2.825 1.60 1.70 3.10 3.20 5.30 1.40 4.30 Rev. 01 — 30 May 2006 www.DataSheet4U.com PBSS305PD (BISS) transistor CEsat solder lands solder resist 0.45 0.55 occupied area solder paste msc422 solder lands solder resist 0.45 1.45 4.45 occupied area solder paste MSC423 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. ...

Page 13

... Revision history Document ID Release date PBSS305PD_1 20060530 PBSS305PD_1 Product data sheet 100 PNP low V Data sheet status Change notice Product data sheet - Rev. 01 — 30 May 2006 www.DataSheet4U.com PBSS305PD (BISS) transistor CEsat Supersedes - © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...

Page 14

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Rev. 01 — 30 May 2006 www.DataSheet4U.com PBSS305PD (BISS) transistor CEsat © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. Document identifier: PBSS305PD_1 www.DataSheet4U.com (BISS) transistor All rights reserved. Date of release: 30 May 2006 ...

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