PBSS305PD Philips Semiconductors, PBSS305PD Datasheet - Page 7

• Manufacturer Part Number: PBSS305PD
• Description: 2 A PNP low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
7. Characteristics
PBSS305PD_1
Product data sheet
Table 7.
T
[1]
Symbol Parameter
I
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
CES
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25 C unless otherwise specified.
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance V
Characteristics
p
300 s;
Rev. 01 — 30 May 2006
0.02.
Conditions
V
V
T
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
V
V
I
V
f = 100 MHz
f = 1 MHz
C
C
C
C
C
C
C
C
C
Bon
j
CB
CB
CE
EB
CE
CE
CE
CE
CE
CC
CE
CB
= 150 C
= 500 mA; I
= 1 A; I
= 2 A; I
= 3 A; I
= 2 A; I
= 500 mA; I
= 1 A; I
= 1 A; I
= 3 A; I
= 5 V; I
= 0.1 A; I
= 100 V; I
= 100 V; I
= 80 V; V
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
= 10 V; I
= 9.2 V; I
B
B
B
B
B
B
B
C
= 50 mA
= 200 mA
= 300 mA
= 200 mA
= 50 mA
= 100 mA
= 300 mA
C
C
C
C
C
C
E
= 0 A
= 500 mA
= 1 A
= 2 A
= 3 A
= 2 A
Boff
C
BE
B
B
E
E
100 V, 2 A PNP low V
= i
= 100 mA;
= 2 A;
= 50 mA
= 50 mA
= 0 A
= 0 A;
= 0 V
= 0.1 A
e
= 0 A;
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Min
-
-
-
-
175
145
55
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PBSS305PD
CEsat
Typ
-
-
-
-
275
225
75
30
88
13
197
210
169
197
366
110
36
65
130
175
275
0.80
0.82
0.84
0.95
0.83
(BISS) transistor
w w w . D a t a S h e e t 4 U
Max
-
-
-
-
125
-
-
-
-
-
-
-
-
100
50
100
100
90
185
250
395
0.85
0.88
0.90
1.01
1.00
7 of 15
Unit
nA
nA
nA
mV
mV
mV
mV
m
V
V
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
A