PBSS4140T Philips Semiconductors, PBSS4140T Datasheet - Page 2

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PBSS4140T

Manufacturer Part Number
PBSS4140T
Description
40 V/ 1A NPN low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN low V
PNP complement: PBSS5140T.
MARKING
Note
1. * = p: made in Hong Kong.
ORDERING INFORMATION
2004 Mar 16
PBSS4140T
PBSS4140T
Low collector-emitter saturation voltage
High current capabilities.
Improved device reliability due to reduced heat
generation.
General purpose switching and muting
LCD backlighting
Supply line switching circuits
Battery driven equipment (mobile phones, video
cameras and hand-held devices).
40 V, 1A
NPN low V
NUMBER
* = t: made in Malaysia.
* = W: made in China.
TYPE
TYPE NUMBER
CEsat
transistor in a SOT23 plastic package.
CEsat
NAME
(BISS) transistor
MARKING CODE
plastic surface mounted package; 3 leads
ZT*
(1)
DESCRIPTION
2
QUICK REFERENCE DATA
PINNING
PACKAGE
handbook, halfpage
V
I
R
CM
SYMBOL
CEO
CEsat
PIN
Fig.1 Simplified outline (SOT23) and symbol.
1
2
3
Top view
collector-emitter voltage
peak collector current
equivalent on-resistance
base
emitter
collector
1
PARAMETER
3
DESCRIPTION
2
MAM255
Product specification
PBSS4140T
1
40
2
<500
VERSION
MAX.
SOT23
3
2
V
A
m
UNIT

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