PBSS4140T Philips Semiconductors, PBSS4140T Datasheet - Page 4

• Manufacturer Part Number: PBSS4140T
• Description: 40 V/ 1A NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Mar 16
I
I
I
h
V
R
V
V
f
C
amb
CBO
CEO
EBO
T
SYMBOL
FE
CEsat
BEsat
BEon
CEsat
c
40 V, 1A
NPN low V
= 25 C unless otherwise specified.
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation
voltage
base-emitter turn-on
voltage
transition frequency
collector capacitance
p
CEsat
300 s;
PARAMETER
(BISS) transistor
0.02.
V
V
V
V
V
V
V
I
I
I
I
I
V
I
V
C
C
C
C
C
C
CB
CB
CE
EB
CE
CE
CE
CE
CB
= 100 mA; I
= 500 mA; I
= 1 A; I
= 500 mA; I
= 1 A; I
= 50 mA; V
= 5 V; I
= 40 V; I
= 40 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 10 V; I
B
B
= 100 mA
= 100 mA
C
CONDITIONS
C
C
C
C
E
E
B
E
= 0 A
= 1 mA
= 500 mA
= 1 A
= 1 A
CE
B
B
B
4
= 0 A
= 0 A; T
= 0 A
= I
= 1 mA
= 50 mA
= 50 mA; note 1
= 10 V; f = 100 MHz
e
= 0 A; f = 1 MHz
amb
= 150 C
300
300
200
150
MIN.
260
TYP.
PBSS4140T
Product specification
100
50
100
100
900
200
250
500
<500
1.2
1.1
10
MAX.
nA
nA
nA
mV
mV
mV
m
V
V
MHz
pF
UNIT
A