PBSS4320T Philips Semiconductors, PBSS4320T Datasheet - Page 2

• Manufacturer Part Number: PBSS4320T
• Description: 20 V NPN low VCEsat transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN low V
PNP complement: PBSS5320T.
MARKING
Note
1. * = p: Made in Hong Kong.
ORDERING INFORMATION
2004 Mar 18
4
PBSS4320T
PBSS4320T
Low collector-emitter saturation voltage V
corresponding low R
High collector current capability
High collector current gain
Improved efficiency due to reduced heat generation.
Power management applications
Low and medium power DC/DC convertors
Supply line switching
Battery chargers
Linear voltage regulation with low voltage drop-out
(LDO).
20 V NPN low V
NUMBER
* = t: Made in Malaysia.
* = W: Made in China.
TYPE
TYPE NUMBER
CEsat
transistor in a SOT23 plastic package.
NAME
CEsat
CEsat
ZG*
MARKING CODE
plastic surface mounted package; 3 leads
transistor
CEsat
and
(1)
2
DESCRIPTION
QUICK REFERENCE DATA
PINNING
handbook, halfpage
V
I
I
R
SYMBOL
PACKAGE
C
CRP
CEO
CEsat
PIN
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
Top view
collector-emitter voltage
collector current (DC)
repetitive peak collector
current
equivalent on-resistance
base
emitter
collector
1
PARAMETER
3
DESCRIPTION
2
MAM255
Product specification
PBSS4320T
1
20
2
3
105
MAX.
VERSION
SOT23
3
2
V
A
A
m
UNIT