PBSS4320T Philips Semiconductors, PBSS4320T Datasheet - Page 4

• Manufacturer Part Number: PBSS4320T
• Description: 20 V NPN low VCEsat transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Mar 18
4
I
I
h
V
R
V
V
f
C
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BEsat
BEon
CEsat
c
20 V NPN low V
= 25 C unless otherwise specified.
collector-base cut-off current I
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation
voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
300 s;
PARAMETER
CEsat
0.02.
transistor
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
f = 100 MHz
I
E
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
E
= 0 A; V
= 0 A; V
= I
= 0 A; V
= 100 mA; V
= 500 mA; V
= 1 A; V
= 2 A; V
= 3 A; V
= 500 mA; I
= 1 A; I
= 2 A; I
= 2 A; I
= 3 A; I
= 2 A; I
= 2 A; I
= 3 A; I
= 1 A; V
= 100 mA; V
e
= 0 A; V
B
B
B
B
B
B
B
CB
CB
EB
CE
CE
CE
CE
CONDITIONS
= 50 mA
= 300 mA; note 1
= 200 mA; note 1
= 40 mA; note 1
= 200 mA; note 1
= 40 mA; note 1
= 300 mA; note 1
= 20 V
= 20 V; T
= 5 V
= 2 V; note 1
= 2 V; note 1
= 2 V; note 1
= 2 V; note 1
B
CB
CE
CE
CE
4
= 50 mA
= 10 V; f = 1 MHz
= 2 V
= 2 V
= 5 V;
j
= 150 C
220
220
220
200
150
1.2
100
MIN.
80
TYP.
PBSS4320T
Product specification
100
50
100
70
120
230
210
310
105
1.1
1.2
35
MAX.
nA
nA
mV
mV
mV
mV
mV
m
V
V
V
MHz
pF
UNIT
A