PBSS4350T Philips Semiconductors, PBSS4350T Datasheet - Page 3

• Manufacturer Part Number: PBSS4350T
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Operated under pulsed conditions: pulse width t
2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
4. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm
4. Operated under pulsed conditions: pulse width t
2004 Jan 09
V
V
V
I
I
I
I
P
T
T
T
R
SYMBOL
SYMBOL
C
CRP
CM
B
stg
j
amb
CBO
CEO
EBO
tot
th(j-a)
50 V; 3 A NPN low V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
repetitive peak collector current
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to
ambient
PARAMETER
PARAMETER
CEsat
(BISS) transistor
open emitter
open base
open collector
note 1
single peak
T
T
T
T
p
in free air; note 1
in free air; note 2
in free air; note 3
in free air; notes 1 and 4
p
amb
amb
amb
amb
100 ms; duty cycle
100 ms; duty cycle
3
25 C; note 2
25 C; note 3
25 C; note 4
25 C; notes 1 and 2
CONDITIONS
CONDITIONS
0.25.
0.25.
65
65
MIN.
VALUE
417
260
230
104
50
50
5
2
3
5
0.5
300
480
540
1.2
+150
150
+150
PBSS4350T
Product specification
MAX.
UNIT
K/W
K/W
K/W
K/W
V
V
V
A
A
A
A
mW
mW
mW
W
C
C
C
2
2
2
2
.
.
.
.
UNIT