PBSS5220V Philips Semiconductors, PBSS5220V Datasheet
PBSS5220V
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PBSS5220V Summary of contents
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... PBSS5220V PNP low V Rev. 01 — 13 June 2005 1. Product profile 1.1 General description PNP low V Mounted Device (SMD) plastic package. 1.2 Features Low collector-emitter saturation voltage V High collector current capability: I High collector current gain (h High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1 ...
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... T amb junction temperature Rev. 01 — 13 June 2005 PBSS5220V www.DataSheet4U.com PNP low V (BISS) transistor CEsat Simplified outline Symbol Min ...
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... P tot (W) (1) 0.8 (2) 0.4 ( standard footprint Rev. 01 — 13 June 2005 PBSS5220V www.DataSheet4U.com PNP low V (BISS) transistor CEsat Min Max 65 +150 65 +150 006aaa424 80 120 160 amb © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Unit C ...
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... Parameter Conditions thermal resistance from in free air junction to ambient thermal resistance from junction to solder point O , standard footprint Rev. 01 — 13 June 2005 PBSS5220V www.DataSheet4U.com PNP low V (BISS) transistor CEsat Min Typ Max [1] [ 410 [2] [ 250 [3] [4] ...
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... Bon Boff 100 MHz MHz 300 s; 0.02. p Rev. 01 — 13 June 2005 PBSS5220V PNP low V (BISS) transistor CEsat Min Typ Max = 0 ...
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... amb ( 100 Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values Rev. 01 — 13 June 2005 PBSS5220V www.DataSheet4U.com (BISS) transistor CEsat 006aaa427 (1) (2) ( (mA) C 006aaa429 (1) (2) ...
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... V ( amb ( ( ( Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values Rev. 01 — 13 June 2005 PBSS5220V www.DataSheet4U.com PNP low V (BISS) transistor CEsat 006aaa431 (1) (2) ( (mA ...
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... (probe) oscilloscope 450 mA mA open Bon Boff Rev. 01 — 13 June 2005 PBSS5220V www.DataSheet4U.com PNP low V (BISS) transistor CEsat input pulse (idealized waveform) I (100 %) Bon I Boff output pulse (idealized waveform ...
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... Dimensions in mm Packing methods Package Description SOT666 2 mm pitch tape and reel 4 mm pitch tape and reel Rev. 01 — 13 June 2005 PBSS5220V www.DataSheet4U.com PNP low V (BISS) transistor CEsat 0.6 0.5 4 0.3 0.1 3 0.18 0.27 0.08 0.17 04-11-08 [1] Packing quantity 4000 - -115 Section 17 ...
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... OI1 = 2.750 2.450 2.100 Obl = Pbl = 1.600 1.200 2.200 CU MSD779 La1 = 2.500 CU Rev. 01 — 13 June 2005 PBSS5220V www.DataSheet4U.com (BISS) transistor CEsat SOLDER LANDS SOLDER RESIST OCCUPIED AREA PLACEMENT AREA © Koninklijke Philips Electronics N.V. 2005. All rights reserved. ...
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... Product data sheet PNP low V Data sheet status Change notice Product data sheet - Rev. 01 — 13 June 2005 PBSS5220V www.DataSheet4U.com (BISS) transistor CEsat Doc. number Supersedes 9397 750 14936 - © Koninklijke Philips Electronics N.V. 2005. All rights reserved. ...
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... Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Rev. 01 — 13 June 2005 PBSS5220V www.DataSheet4U.com PNP low V (BISS) transistor CEsat © Koninklijke Philips Electronics N.V. 2005. All rights reserved. ...
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... Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 16 Trademarks Contact information . . . . . . . . . . . . . . . . . . . . 12 PBSS5220V PNP low V CEsat © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice ...