PBSS5220V Philips Semiconductors, PBSS5220V Datasheet - Page 5

• Manufacturer Part Number: PBSS5220V
• Description: 2A PNP low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
7. Characteristics
9397 750 14936
Product data sheet
Table 7:
T
[1]
Symbol Parameter
I
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
CES
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25 C unless otherwise specified.
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter saturation
voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
Characteristics
p
300 s;
Rev. 01 — 13 June 2005
0.02.
Conditions
V
V
T
V
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
V
I
I
V
f = 100 MHz
V
f = 1 MHz
C
C
C
C
C
C
C
C
C
C
Boff
j
CB
CB
CE
EB
CE
CE
CE
CE
CE
CE
CE
CB
= 150 C
= 100 mA; I
= 500 mA; I
= 1 A; I
= 1 A; I
= 2 A; I
= 2 A; I
= 1 A; I
= 1 A; I
= 1 A; I
= 1 A; I
= 50 mA
= 20 V; I
= 20 V; I
= 20 V; V
= 5 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 5 V; I
= 10 V; I
= 10 V; I
B
B
B
B
B
B
B
Bon
C
= 50 mA
= 100 mA
= 100 mA
= 200 mA
= 100 mA
= 50 mA
= 100 mA
C
C
C
C
C
C
E
E
C
E
20 V, 2 A PNP low V
= 0 A
= 50 mA;
= 1 mA
= 100 mA
= 500 mA
= 1 A
= 2 A
= 1 A
BE
B
B
= 0 A
= 0 A;
= i
= 50 mA;
= 1 mA
= 50 mA
= 0 V
e
= 0 A;
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
220
220
220
155
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
150
-
PBSS5220V
CEsat
Typ
-
-
-
-
495
440
310
220
120
140
8
34
42
140
45
185
185
15
50
75
155
140
305
265
0.95
1
0.8
(BISS) transistor
w w w . D a t a S h e e t 4 U .
Max
-
-
-
-
-
210
-
-
-
-
-
-
-
20
0.1
50
0.1
0.1
80
115
220
210
455
390
1.1
1.1
1
Unit
mV
mV
mV
mV
mV
mV
m
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
5 of 13
A
A
A
A