PBSS8110D Philips Semiconductors, PBSS8110D Datasheet
PBSS8110D
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PBSS8110D Summary of contents
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... PBSS8110D 100 NPN low V Rev. 01 — 23 April 2004 1. Product profile 1.1 General description NPN low V 1.2 Features SOT457 package Low collector-emitter saturation voltage V High collector current capability I High efficiency, leading to less heat generation. 1.3 Applications Major application segments: Automotive 42 V power Telecom infrastructure Industrial ...
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... Product data sheet Discrete pinning Description collector base emitter Ordering information Name Description - plastic surface mounted package; 6 leads Marking Rev. 01 — 23 April 2004 PBSS8110D 100 NPN low V (BISS) transistor CEsat Simplified outline Symbol Top view [1] ...
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... P tot (mW) 600 400 200 collector mounting pad. 2 collector mounting pad. Rev. 01 — 23 April 2004 PBSS8110D 100 NPN low V (BISS) transistor CEsat Conditions Min Max open emitter - 120 open base - 100 open collector - 5 T ...
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... Fig 2. Transient thermal impedance as a function of pulse time; typical values. 9397 750 12566 Product data sheet Conditions in free air Rev. 01 — 23 April 2004 PBSS8110D 100 NPN low V (BISS) transistor CEsat Typ [1] 416 [2] 227 [3] 178 [ collector mounting pad. ...
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... 100 mA 100 MHz MHz Rev. 01 — 23 April 2004 PBSS8110D 100 NPN low V CEsat Min Typ Max - - 100 - - 100 - - 100 150 - - 150 - 500 ...
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... T (3) T Fig 4. Base-emitter voltage as a function of collector 001aaa504 10 V CEsat (mV (mA) C Fig 6. Collector-emitter saturation voltage as a Rev. 01 — 23 April 2004 PBSS8110D 100 NPN low V CEsat (1) (2) ( amb = 25 C. amb = 100 C ...
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... Fig 8. Base-emitter saturation voltage as a function of 001aaa499 1000 V BEsat (mV) 800 600 400 (mA) C Fig 10. Base-emitter saturation voltage as a function of Rev. 01 — 23 April 2004 PBSS8110D 100 NPN low V (BISS) transistor CEsat (1) ( ...
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... V (V) CE (1) T (2) T (3) T Fig 12. Equivalent on-resistance as a function of 001aaa502 R CEsat ( ) (mA) C Fig 14. Equivalent on-resistance as a function of Rev. 01 — 23 April 2004 PBSS8110D 100 NPN low V CEsat 10 100 C. ...
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... scale 3.1 1.7 3.0 0.6 0.95 2.7 1.3 2.5 0.2 REFERENCES JEDEC EIAJ SC-74 Rev. 01 — 23 April 2004 PBSS8110D 100 NPN low V CEsat detail 0.33 0.2 0.2 0.1 0.23 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2004. All rights reserved. (BISS) transistor ...
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... Release date Data sheet status PBSS8110D_1 20040423 9397 750 12566 Product data sheet 100 NPN low V Change notice Product data - Rev. 01 — 23 April 2004 PBSS8110D (BISS) transistor CEsat Order number Supersedes 9397 750 12566 - © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...
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... Rev. 01 — 23 April 2004 PBSS8110D 100 NPN low V (BISS) transistor CEsat © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...
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... Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Disclaimers Contact information . . . . . . . . . . . . . . . . . . . . 11 PBSS8110D 100 NPN low V © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice ...