PBSS8110D Philips Semiconductors, PBSS8110D Datasheet - Page 4

• Manufacturer Part Number: PBSS8110D
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
6. Thermal characteristics
Table 6:
[1]
[2]
[3]
9397 750 12566
Product data sheet
Symbol
R
R
Fig 2. Transient thermal impedance as a function of pulse time; typical values.
th(j-a)
th(j-s)
(10)
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6 cm
(K/W)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
Z
10
th
10
10
10
1
3
2
1
10
Mounted on FR4 PCB; standard footprint.
= 1.
= 0.75.
= 0.5.
= 0.33.
= 0.2.
= 0.1.
= 0.05.
= 0.02.
= 0.01.
= 0.
(10)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
5
Thermal characteristics
Parameter
thermal resistance from junction to ambient in free air
thermal resistance from junction to
soldering point
10
4
10
3
10
2
Rev. 01 — 23 April 2004
10
Conditions
in free air
1
100 V, 1 A NPN low V
1
2
2
collector mounting pad.
collector mounting pad.
10
[1]
[2]
[3]
[1]
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Typ
416
227
178
83
PBSS8110D
CEsat
10
2
(BISS) transistor
t
p
001aaa494
(s)
Unit
K/W
K/W
K/W
K/W
10
3
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