PBSS8110T Philips Semiconductors, PBSS8110T Datasheet

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PBSS8110T

Manufacturer Part Number
PBSS8110T
Description
NPN low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet

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PBSS8110T
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PBSS8110T,215
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Product specification
Supersedes data of 2003 Jul 28
book, halfpage
DATA SHEET
PBSS8110T
100 V, 1 A
NPN low V
DISCRETE SEMICONDUCTORS
CEsat
M3D088
(BISS) transistor
2003 Dec 22

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PBSS8110T Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage PBSS8110T 100 NPN low V Product specification Supersedes data of 2003 Jul 28 M3D088 (BISS) transistor CEsat 2003 Dec 22 ...

Page 2

... I and CEsat PINNING handbook, halfpage (1) MARKING CODE *U8 PACKAGE DESCRIPTION plastic surface mounted package; 3 leads 2 Product specification PBSS8110T PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance PIN DESCRIPTION 1 base 2 emitter 3 collector Top view MAM255 Fig ...

Page 3

... Fig.2 Power derating curves. 2003 Dec 22 CONDITIONS open emitter open base open collector limited max note 1 amb note 2 amb MLE354 120 160 T amb ( C) 3 Product specification PBSS8110T MIN. MAX. UNIT 120 V 100 300 mA 300 mW 480 mW ...

Page 4

... Fig.3 Transient thermal impedance as a function of pulse time for standard PCB footprint. 2003 Dec 22 CONDITIONS in free air; note 1 in free air; note (5) = 0.2. (7) = 0.05. (6) = 0.1. (8) = 0.02. 4 Product specification PBSS8110T VALUE 417 260 (9) = 0.01. (10) = 0.0. UNIT K/W K mle356 ...

Page 5

... Fig.4 Transient thermal impedance as a function of pulse time for collector 1 cm 2003 Dec (5) = 0.2. (7) = 0.05. (6) = 0.1. (8) = 0.02. 5 Product specification PBSS8110T (9) = 0.01. (10) = 0.0. 2 copper mounting pad. mle355 (s) p ...

Page 6

... 100 mA 100 MHz MHz Product specification PBSS8110T MIN. TYP. MAX. UNIT 100 100 nA 100 nA 150 150 500 100 120 mV 200 mV ...

Page 7

... I (mA (1) T (2) T (3) T Fig.6 MLE366 handbook, halfpage V CEsat (1) (2) ( (mA Fig.8 7 PBSS8110T 1 (V) (1) 0.8 (2) (3) 0 amb = 25 C. amb = 100 C. amb Base-emitter voltage as a function of collector current; typical values. ...

Page 8

... I C (1) T (2) T (3) T Fig.10 Base-emitter saturation voltage as a MLE364 handbook, halfpage V BEsat (mA amb Fig.12 Base-emitter saturation voltage Product specification PBSS8110T 10 (V) 1 (1) ( amb = 25 C. amb = 100 C. ...

Page 9

... A. B (2) T (10 350 A. B (3) T Fig.14 Collector-emitter equivalent on-resistance MLE360 handbook, halfpage R CEsat (mA amb Fig.16 Collector-emitter equivalent on-resistance 9 Product specification PBSS8110T ( 100 C. amb = 25 C. ...

Page 10

... VERSION IEC SOT23 2003 Dec scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC EIAJ TO-236AB 10 Product specification PBSS8110T detail 0.45 0.55 0.2 0.1 0.15 0.45 EUROPEAN PROJECTION SOT23 ISSUE DATE 97-02-28 99-09-13 ...

Page 11

... Product specification PBSS8110T DEFINITION These products are not Philips Semiconductors ...

Page 12

... Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. ...

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