PBSS8110T Philips Semiconductors, PBSS8110T Datasheet - Page 2

• Manufacturer Part Number: PBSS8110T
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN low V
PNP complement: PBSS9110T.
MARKING
Note
1.
ORDERING INFORMATION
2003 Dec 22
PBSS8110T
PBSS8110T
TYPE NUMBER
SOT23 package
Low collector-emitter saturation voltage V
High collector current capability: I
Higher efficiency leading to less heat generation
Reduced printed-circuit board requirements.
Major application segments
– Automotive 42 V power
– Telecom infrastructure
– Industrial
Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting.
Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
– Inductive load driver (e.g. relays,
100 V, 1 A
NPN low V
and LEDs).
buzzers and motors).
= p : Made in Hong Kong.
= t : Made in Malaysia.
= W : Made in China.
TYPE NUMBER
CEsat
transistor in a SOT23 plastic package.
CEsat
NAME
(BISS) transistor
MARKING CODE
C
and I
plastic surface mounted package; 3 leads
*U8
CM
CEsat
(1)
2
QUICK REFERENCE DATA
PINNING
handbook, halfpage
DESCRIPTION
V
I
I
R
SYMBOL
C
CM
CEO
CEsat
PACKAGE
Fig.1 Simplified outline (SOT23) and symbol.
Top view
PIN
collector-emitter voltage
collector current (DC)
repetitive peak collector
current
equivalent on-resistance
1
2
3
1
PARAMETER
3
base
emitter
collector
2
MAM255
Product specification
DESCRIPTION
PBSS8110T
1
100
1
3
200
MAX.
VERSION
SOT23
3
2
V
A
A
m
UNIT