PBSS9110X Philips Semiconductors, PBSS9110X Datasheet

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PBSS9110X

Manufacturer Part Number
PBSS9110X
Description
PNP low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS9110X
Manufacturer:
NXP/恩智浦
Quantity:
20 000
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
PNP low V
TO-243) SMD plastic package.
NPN complement: PBSS8110X.
Table 1:
[1]
Symbol
V
I
I
R
C
CM
CEO
CEsat
PBSS9110X
100 V, 1 A PNP low V
Rev. 01 — 2 May 2005
SOT89 package
Low collector-emitter saturation voltage V
High collector current capability I
High efficiency leading to less heat generation
Major application segments:
Peripheral driver:
DC-to-DC conversion
Pulse test: t
Automotive 42 V power
Telecom infrastructure
Industrial
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors)
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
collector-emitter saturation
resistance
p
Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/
300 s;
0.02.
CEsat
C
and I
Conditions
open base
single pulse;
t
I
I
(BISS) transistor
p
C
B
= 100 mA
= 1 A;
1 ms
CM
CEsat
[1]
Min
-
-
-
-
Product data sheet
Typ
-
-
-
170
Max
320
100
1
3
Unit
V
A
A
m

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PBSS9110X Summary of contents

Page 1

... PBSS9110X 100 PNP low V Rev. 01 — 2 May 2005 1. Product profile 1.1 General description PNP low V TO-243) SMD plastic package. NPN complement: PBSS8110X. 1.2 Features SOT89 package Low collector-emitter saturation voltage V High collector current capability I High efficiency leading to less heat generation 1.3 Applications ...

Page 2

... Description emitter collector base Ordering information Name Description SC-62 plastic surface mounted package; collector pad for good heat transfer; 3 leads Marking codes Rev. 01 — 2 May 2005 PBSS9110X 100 PNP low V (BISS) transistor CEsat Simplified outline Symbol [1] Marking code *4C © ...

Page 3

... T junction temperature ambient temperature storage temperature O , standard footprint 2.0 (1) P tot (W) 1.6 (2) 1.2 0.8 (3) 0 standard footprint 2 3 Rev. 01 — 2 May 2005 PBSS9110X 100 PNP low V (BISS) transistor CEsat Min Max - 120 - 100 - 0.3 [ 0.55 amb [2] - 1.4 ...

Page 4

... Product data sheet Thermal characteristics Parameter Conditions thermal resistance from in free air junction to ambient thermal resistance from junction to solder point O , standard footprint Rev. 01 — 2 May 2005 PBSS9110X 100 PNP low V (BISS) transistor CEsat Min Typ [ [ [ 006aaa409 2 1 ...

Page 5

... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 9397 750 14765 Product data sheet Rev. 01 — 2 May 2005 PBSS9110X 100 PNP low V (BISS) transistor CEsat 006aaa411 (s) p 006aaa410 ...

Page 6

... mA 100 MHz collector capacitance MHz 300 s; 0.02. p Rev. 01 — 2 May 2005 PBSS9110X 100 PNP low V CEsat Min Typ = ...

Page 7

... C (1) T (2) T (3) T Fig 6. Base-emitter voltage as a function of collector 001aaa378 V CEsat (mA) C (1) I (2) I Fig 8. Collector-emitter saturation voltage as a Rev. 01 — 2 May 2005 PBSS9110X 100 PNP low V CEsat 1.2 BE (V) (1) 0.8 (2) (3) 0 ...

Page 8

... Fig 10. Base-emitter saturation voltage as a function of 001aaa382 R CEsat ( ) (1) (2) ( (mA) C (1) I (2) I Fig 12. Collector-emitter saturation resistance as a Rev. 01 — 2 May 2005 PBSS9110X 100 PNP low V CEsat 10 ( amb collector current ...

Page 9

... B Fig 13. Collector current as a function of collector-emitter voltage; typical values 9397 750 14765 Product data sheet (A) 1.6 1.2 0.8 0 Rev. 01 — 2 May 2005 PBSS9110X 100 PNP low V (BISS) transistor CEsat 001aaa384 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10 (V) CE © Koninklijke Philips Electronics N.V. 2005. All rights reserved. ...

Page 10

... Product data sheet (probe) oscilloscope 450 0 0.025 Bon Rev. 01 — 2 May 2005 PBSS9110X 100 PNP low V CEsat I (100 %) Bon I Boff off (probe) o ...

Page 11

... For further information and the availability of packing methods, see 9397 750 14765 Product data sheet 4.6 4.4 1.8 1.4 2.6 2 0.53 0.40 1.5 3 Dimensions in mm Packing methods Package Description SOT89 8 mm pitch tape and reel Rev. 01 — 2 May 2005 PBSS9110X 100 PNP low V (BISS) transistor CEsat 1.6 1.4 4.25 3.75 1.2 0.8 3 0.48 0.44 0.35 0.23 04-08-03 [1] Packing quantity 1000 -115 Section 18. ...

Page 12

... SOT89 standard mounting conditions for reflow soldering Dimensions 3.96 mm 1.6 mm 001aaa234 Rev. 01 — 2 May 2005 PBSS9110X 100 PNP low V (BISS) transistor CEsat 1.70 4.85 0.50 1.20 1 msa442 0.60 (3x) 0.70 (3x 2 0.5 mm 3.96 mm 1.6 mm 001aaa235 Fig 19. FR4 PCB, mounting pad for ...

Page 13

... Product data sheet Data sheet status Change notice Product data sheet - Rev. 01 — 2 May 2005 PBSS9110X 100 PNP low V (BISS) transistor CEsat Doc. number Supersedes 9397 750 14765 - © Koninklijke Philips Electronics N.V. 2005. All rights reserved. ...

Page 14

... Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Rev. 01 — 2 May 2005 PBSS9110X 100 PNP low V (BISS) transistor CEsat © Koninklijke Philips Electronics N.V. 2005. All rights reserved ...

Page 15

... Disclaimers Trademarks Contact information . . . . . . . . . . . . . . . . . . . . 14 PBSS9110X 100 PNP low V © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice ...

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