PBSS9110X Philips Semiconductors, PBSS9110X Datasheet - Page 6

• Manufacturer Part Number: PBSS9110X
• Description: PNP low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
7. Characteristics
9397 750 14765
Product data sheet
Table 7:
T
[1]
Symbol Parameter
I
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
CES
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25 C unless otherwise specified.
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter saturation
voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
Characteristics
p
300 s;
Rev. 01 — 2 May 2005
0.02.
Conditions
V
V
T
V
V
V
V
V
V
I
I
I
I
I
I
I
I
V
I
I
I
f = 100 MHz
I
f = 1 MHz
C
B
C
B
C
C
C
C
Bon
Boff
C
E
j
CB
CB
CE
EB
CE
CE
CE
CE
CC
= 150 C
= 25 mA
= 50 mA
= i
= 250 mA;
= 500 mA;
= 1 A; I
= 1 A; I
= 1 A; I
= 1 A; V
= 50 mA; V
= 0.025 A;
= 0.025 A
= 4 V; I
= 80 V; I
= 80 V; I
= 80 V; V
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 10 V; I
e
= 0 A; V
B
B
B
CE
= 100 mA
= 100 mA
= 100 mA
C
C
C
C
C
100 V, 1 A PNP low V
E
E
C
CB
= 0 A
= 1 mA
= 250 mA
= 0.5 A
= 1 A
= 5 V
CE
BE
= 0 A
= 0 A;
= 0.5 A;
= 10 V;
= 10 V;
= 0 V
[1]
[1]
[1]
[1]
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Min
-
-
-
-
150
150
150
125
-
-
-
-
-
-
-
-
-
-
-
-
100
-
PBSS9110X
CEsat
Typ
-
-
-
-
-
-
-
-
-
-
-
170
-
-
20
60
80
290
120
410
-
-
(BISS) transistor
Max
-
-
450
-
320
-
-
-
-
-
-
-
17
100
50
100
100
120
180
320
1.1
1.0
Unit
nA
nA
nA
mV
mV
mV
m
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
6 of 15
A