FMA219 Filtronic Compound Semiconductors, FMA219 Datasheet
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FMA219
Manufacturer Part Number
FMA219
Description
X-BAND LNA MMIC
Manufacturer
Filtronic Compound Semiconductors
Datasheet
1.FMA219.pdf
(5 pages)
www.DataSheet4U.com
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The FMA219 is a 2-stage, reactively matched
pHEMT low-noise MMIC amplifier designed for
use over 7.0 to 11.0 GHz. The amplifier
requires a single +3V supply and one off-chip
component for supply de-coupling. Both the
input and output ports are DC de-coupled.
Grounding of the amplifier is provided by
plated thru-vias to the bottom of the die, no
additional ground is required. The amplifier is
unconditionally stable over all load states (-45
to +85°C), and conditionally stable if the input
port is open-circuited.
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Note: T
EATURES
LECTRICAL
Input Return Loss @ 9.5GHz + 10GHz
ENERAL
Tel: +44 (0) 1325 301111
3rd Order Intermodulation Distortion
Operating Frequency Bandwidth
7.0 – 11.0 GHz Operating Bandwidth
1.1 dB Noise Figure
21 dB Small-Signal Gain
12 dBm Output Power
+3V Single Bias Supply
DC De-coupled Input and Output Ports
Power at 1dB Compression
Small Signal Gain Flatness
AND
AMBIENT
Output Return Loss
Operating Current
Small Signal Gain
Input Return Loss
P
Reverse Isolation
ARAMETER
Noise Figure
D
:
= 22°C
ESCRIPTION
LNA MMIC
S
PECIFICATIONS
:
Fax: +44 (0) 1325 306177
S11(9.5+10GHz)
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Specifications subject to change without notice
:
Filtronic Compound Semiconductors Ltd
YMBOL
P1dB
∆S21
S21
IOP
IMD
S11
S22
S12
BW
NF
VDD = +3 V IDD = IOP
VDD = +3 V IDD = IOP
VDD = +3 V IDD = IOP
VDD = +3 V, IDD = IOP
VDD = +3 V, IDD = IOP
POUT = +1.5 dBm SCL
VDD = +3 V IDD = IOP
VDD = +3 V IDD = IOP
VDD = +3 V IDD = IOP
VDD = +3 V IDD = IOP
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ONDITIONS
No RF input
VDD = +3 V
Email: sales@filcs.com
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AYOUT
YPICAL
Low noise front end amp
General X-Band gain block
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PPLICATIONS
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11.5
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IN
Website:
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lifiers
www.filtronic.com
FMA219
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Datasheet v3.0
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dBm
GHz
NITS
dBc
mA
dB
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