DIM400XCM33-F000 Dynex Semiconductor, DIM400XCM33-F000 Datasheet - Page 3

• Manufacturer Part Number: DIM400XCM33-F000
• Description: IGBT Chopper Module
• Manufacturer: Dynex Semiconductor

ELECTRICAL CHARACTERISTICS
T
Note:
†
*
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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L is the circuit inductance + L
Symbol
Measured at the auxiliary terminals
case
V
V
SC
CE(sat)
R
I
I
GE(TH)
C
C
V
I
CES
GES
L
I
FM
INT
res
F
F
ies
M
Data
= 25° C unless stated otherwise.
†
†
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation
voltage
Diode forward current
Diode maximum forward current t
Diode forward voltage
Input capacitance
Reverse transfer capacitance
Module inductance – per arm
Internal resistance – per arm
Short circuit current, I
Parameter
M
SC
V
V
V
I
V
V
DC
I
I
V
V
T
V
V
IEC 6074-9
C
p
F
F
j
GE
GE
GE
GE
GE
CE
CE
GE
CE(max)
= 1ms
= 400 A
= 400 A, T
= 40mA, V
= 125 ° C, V
= 0 V,V
= 0 V, V
= ±15 V, V
= 15V,I
=15V, I
= 25V, V
= 25V, V
= V
Test Conditions
CES
C
C
CE
ce
VJ
t
GE
GE
GE
= 400 A
= 400 A, T
p
= V
= V
CC
CE
= 125 ° C
– L
= V
= 0V, f = 1MHz
= 0V, f = 1MHz
= 2500 V
= 0 V
CES
ces
*
CE
x di/dt
, T
case
VJ
= 125 ° C
= 125 ° C
I
I
1
2
Min Typ. Max
5.5
2000
1850
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400
800
260
6.5
2.8
3.6
2.9
3.0
1.1
72
30
DIM400XCM33-F000
7.0
30
2
1
Units
mA
mA
µ
nH
nF
nF
V
V
V
A
A
V
V
A
A
A
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