DIM800DDM12 Dynex, DIM800DDM12 Datasheet
DIM800DDM12
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DIM800DDM12 Summary of contents
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... The Powerline range of modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM800DDM12-A000 is a dual switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10 s short circuit withstand ...
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... DIM800DDM12-A000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...
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... Junction temperature j T Storage temperature range stg - Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM800DDM12-A000 Min. Test Conditions Continuous dissipation - junction to case Continuous dissipation - junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode – ...
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... DIM800DDM12-A000 ELECTRICAL CHARACTERISTICS T = 25˚C unless stated otherwise. case Parameter Symbol Collector cut-off current I CES Gate leakage current I GES Gate threshold voltage V GE(TH) † V Collector-emitter saturation voltage CE(sat) I Diode forward current F I Diode maximum forward current FM † V Diode forward voltage F Input capacitance ...
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... E Turn-on energy loss ON Q Diode reverse recovery charge rr I Diode reverse current rr E Diode reverse recovery energy REC Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM800DDM12-A000 Test Conditions Min 800A - 15V - 600V - CE ...
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... DIM800DDM12-A000 TYPICAL CHARACTERISTICS 1600 Common emitter T = 25˚C case V is measured at power busbars 1400 ce and not the auxiliary terminals 1200 1000 800 600 400 200 0 0 0.5 1.0 1.5 2.0 Collector-emitter voltage, V Fig. 3 Typical output characteristics 180 T = 125˚ 600V 2.7Ω 160 g 140 ...
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... F Fig. 8 Reverse bias safe operating area 10000 T = 125˚ 1000 100 1000 1200 1400 - (V) R Fig. 10 Forward bias safe operating area DIM800DDM12-A000 = 125˚ 200 400 600 800 1000 1200 Collector emitter voltage ( 85˚ 50µ ...
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... DIM800DDM12-A000 100 10 1 IGBT R (˚C/KW) 0.4391 i (ms) 0.045 i Diode R (˚C/KW) 1.5612 i (ms) 0.0063516 i 1 0.001 0.01 0.1 Pulse width (s) p Fig. 11 Transient thermal impedance 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1500 1400 1300 Diode 1200 1100 Transistor ...
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... Copper terminal thickness, Auxiliary and Gate pin = 0.9 ± 0.1 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 11 140 Nominal weight: 1050g Module outline type code: D DIM800DDM12-A000 6x Ø7 9/10 ...
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... DIM800DDM12-A000 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. ...