DIM800DDM12 Dynex, DIM800DDM12 Datasheet - Page 7

• Manufacturer Part Number: DIM800DDM12
• Description: Dual Switch IGBT Module Preliminary Information
• Manufacturer: Dynex

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1600
1400
1200
1000
800
600
400
200
700
600
500
400
300
200
100
0
0
0
0
Fig. 9 Diode reverse bias safe operating area
Fig. 7 Diode typical forward characteristics
T
V
and not the auxiliary terminals
case
F
is measured at power busbars
200
=125˚C
0.5
T
T
j
j
= 25˚C
= 125˚C
400
1.0
Reverse voltage, V
Forward voltage, V
600
1.5
800
2.0
R
F
- (V)
- (V)
1000
2.5
1200
3.0
1400
3.5
10000
1000
2000
1800
1600
1400
1200
1000
100
800
600
400
200
10
1
1
0
0
T
T
V
R
vj
Module I
Chip I
case
ge
g
= 125˚C, T
Fig. 8 Reverse bias safe operating area
= 2.7Ohms
=15V
Fig. 10 Forward bias safe operating area
200
= 125˚C
I
C(max)
C
C
Collector emitter voltage, V
Collector emitter voltage, V
10
DC
c
400
= 85˚C
600
DIM800DDM12-A000
100
800
1000
ce
ce
1000
- (V)
- (V)
t
t
t
p
p
p
1200
= 50µs
= 100µs
= 1 ms
10000
1400
7/10