DIM800NSM33-F000 Dynex Semiconductor, DIM800NSM33-F000 Datasheet - Page 4

• Manufacturer Part Number: DIM800NSM33-F000
• Description: Single Switch IGBT Module
• Manufacturer: Dynex Semiconductor

DIM800NSM33-F000
ELECTRICAL CHARACTERISTICS
T
T
4/8
Symbol
Symbol
case
case
E
E
t
t
t
t
E
E
E
E
:
d(off)
d(on)
d(off)
d(on)
Q
Q
Q
I
I
OFF
OFF
t
t
t
t
ON
ON
rec
rec
rr
rr
= 25° C unless stated otherwise
= 125° C unless stated otherwise
f
r
f
r
rr
rr
g
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Parameter
Parameter
R
R
I
I
C
C
G(ON)
G(ON)
= 800A, V
= 800A, V
R
R
G(ON)
G(ON)
C
C
= 2.7 , C
= 2.7 , C
ge
ge
Test Conditions
Test Conditions
dI
dI
= 220nF, L ~ 100nH
= 220nF, L ~ 100nH
= 3.9 , R
= 3.9 , R
F
F
V
V
V
V
V
V
/dt =4000A/us
/dt =4000A/us
GE
GE
CE
CE
I
I
CE
CE
I
I
C
GE
C
GE
F
F
= ±15V, V
= ±15V, V
ge
= 800A
ge
= 800A
=800A
=800A
= 1800V
= 1800V
=1800V
=1800V
= ±15V
= ±15V
= 220nF, L ~ 100nH
= 220nF, L ~100nH
G(OFF)
G(OFF)
CE
CE
= 6.2
= 6.2
= 1800V,
= 1800V,
Min
Min
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1050
1250
1200
1750
Typ.
Typ.
270
275
320
670
300
280
315
600
800
600
3.0
1.3
3.1
1.2
20
Max
Max
Units
Units
mJ
mJ
mJ
mJ
mJ
mJ
ns
ns
ns
ns
A
A
C
C
C
s
s
s
s