BD157 Motorola Inc, BD157 Datasheet - Page 2

• Manufacturer Part Number: BD157
• Description: Plastic Medium Power NPN Silicon Transistor
• Manufacturer: Motorola Inc

BD157 BD158 BD159
2
0.07
0.05
0.03
0.02
0.01
1.0
0.7
0.5
0.3
0.2
0.1
5.0
25
20
15
10
300
200
100
70
50
30
20
10
10
0
1.0
Figure 1. Power–Temperature Derating Curve
T J = 150 C
20
V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 3. DC Safe Operating Area
20
BONDING WIRE LIMITED
THERMALLY LIMITED @ T C = 25 C
SECOND BREAKDOWN LIMITED
– 55 C
(SINGLE PULSE)
40
2.0
+ 25 C
T C , CASE TEMPERATURE ( C)
30
60
+ 100 C
3.0
50
T J = 150 C
80
dc
5.0
1.0 ms
100
100
7.0
BD157
BD158
BD159
500 s
120
10
200
10 s
I C , COLLECTOR CURRENT (mAdc)
140
Figure 4. Current Gain
300
160
20
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the ap-
plicable Safe Area to avoid causing a catastrophic failure. To
insure operation below, the maximum T J , power–tempera-
ture derating must be observed for both steady state and
pulse power conditions.
The Safe Operating Area Curves indicate I C – V CE limits
30
1.0
0.8
0.6
0.4
0.2
0
10
Motorola Bipolar Power Transistor Device Data
V CE(sat) @ I C /I B = 10
50
20
70
Figure 2. “On” Voltages
I C , COLLECTOR CURRENT (mA)
30
I C /I B = 5.0
100
V BE @ V CE = 10 V
V BE @ I C /I B = 10
50
200
100
V CE = 10 V
V CE = 2.0 V
T J = + 25 C
300
200 300
500
500