2PB1219A Philips Semiconductors, 2PB1219A Datasheet - Page 2

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2PB1219A

Manufacturer Part Number
2PB1219A
Description
PNP general purpose transistor
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
PNP transistor in a SOT323; SC70 plastic package.
NPN complement: 2PD1820A.
MARKING
Note
1.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Refer to SOT323; SC70 standard mounting conditions.
1999 Apr 12
2PB1219AQ
2PB1219AR
2PB1219AS
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
stg
j
amb
High current (max. 500 mA)
Low voltage (max. 50 V)
Low collector-emitter saturation voltage (max. 600 mV).
General purpose switching and amplification.
CBO
CEO
EBO
tot
PNP general purpose transistor
= - : Made in Hong Kong.
= t : Made in Malaysia.
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
PARAMETER
MARKING CODE
D Q
D R
D S
(1)
open emitter
open base
open collector
T
amb
2
PINNING
handbook, halfpage
25 C; note 1
CONDITIONS
Fig.1
PIN
1
2
3
Top view
Simplified outline (SOT323; SC70)
and symbol.
base
emitter
collector
1
3
65
65
MIN.
DESCRIPTION
2
Product specification
MAM048
200
+150
150
+150
60
50
5
500
1
200
MAX.
2PB1219A
1
3
2
V
V
V
mA
A
mA
mW
C
C
C
UNIT

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