2PB1219A Philips Semiconductors, 2PB1219A Datasheet - Page 3

• Manufacturer Part Number: 2PB1219A
• Description: PNP general purpose transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Refer to SOT323; SC70 standard mounting conditions.
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 12
R
I
I
h
h
V
V
C
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
FE
CEsat
BEsat
th j-a
c
PNP general purpose transistor
= 25 C unless otherwise specified.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
p
2PB1219AQ
2PB1219AR
2PB1219AS
2PB1219AQ
2PB1219AR
2PB1219AS
300 s;
PARAMETER
0.02.
PARAMETER
I
I
I
I
I
I
I
I
I
f = 100 MHz; note 1
E
E
C
C
C
C
C
E
C
= 0; V
= 0; V
= i
= 0; V
= 150 mA; V
= 500 mA; V
= 300 mA; I
= 300 mA; I
= 50 mA; V
e
= 0; V
3
CB
CB
EB
= 20 V
= 20 V; T
= 4 V
CONDITIONS
CB
CE
note 1
B
B
= 10 V; f = 1 MHz
CE
CE
= 10 V;
= 30 mA; note 1
= 30 mA; note 1
CONDITIONS
= 10 V; note 1
= 10 V; note 1
j
= 150 C
85
120
170
40
100
120
140
MIN.
VALUE
625
Product specification
2PB1219A
170
240
340
15
MAX.
100
5
100
600
1.5
UNIT
K/W
nA
nA
mV
V
pF
MHz
MHz
MHz
UNIT
A