2MBI200N-120 Fuji, 2MBI200N-120 Datasheet - Page 3

• Manufacturer Part Number: 2MBI200N-120
• Description: IGBT MODULE ( N series )
• Manufacturer: Fuji

0,001
1000
0,01
100
500
400
300
200
100
0,1
0,001
0
0
V
CC
Forward current vs. Forward voltage
1
=600V, I
Transient thermal resistance
Gate resistance : R
Forward voltage : V
Pulse width : PW [sec]
0,01
Switching time vs. R
T
C
j
=200A, V
=125°C
2
V
GE
= O V
GE
25°C
10
=±15V, T
3
G
0,1
F
[ ]
[V]
G
j
=25°C
4
t
t
t
Diode
t
IGBT
off
on
r
f
5
1
1000
2000
1600
1200
100
800
600
400
200
800
400
0
0
0
0
0
+V
200
Reversed biased safe operating area
GE
500
RBSOA (Repetitive pulse)
S C S O A
(non-repetitive pulse)
Collector-Emitter voltage : V
Reverse recovery characteristics
=15V, -V
100
Dynamic input characteristics
400
Forward current : I
Gate charge : Q
1000
GE
t
rr
<15V, T
T
600
, I
j
=25°C
200
rr
vs. I
1500
j
<125°C, R
800
F
G
[nC]
F
[A]
CE
300
1000
2000
G
[V]
>4.7
V
t
I
t
I
CC
rr
rr
rr
rr
125°C
125°C
25°C
25°C
=400V
1200
600V
800V
2500
400
20
15
25
10
5
0