6MBI225U-170 FE, 6MBI225U-170 Datasheet

6MBI225U-170

Manufacturer Part Number

6MBI225U-170

Description

IGBT Module U-Series 1700V / 225A 6 in one-package

Manufacturer

Datasheet

1.6MBI225U-170.pdf (5 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

6MBI225U-170

Manufacturer:

FUJI

Quantity:

1 000

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

6MBI225U-170

Quantity:

Current page: 1 of 5
Download datasheet (165Kb)

www.DataSheet4U.com

6MBI225U-170

IGBT Module U-Series

· High speed switching

· Voltage drive

· Low inductance module structure

Item

Collector-Emitter voltage

Gate-Emitter voltaga

Collector current

Collector Power Dissipation

Junction temperature

Storage temperature

Isolation voltage between terminal and copper base *1

Screw Torque

Thermal resistance

Contact Thermal resistance

Items

1 :

2 :

:Biggest internal terminal resistance among arm.

Thermal resistance characteristics

: This is the value which is defined mounting on the additional cooling fin with thermal compound.

to base plate when isolation test will be done.

:Recommendable value : 2.5 to 3.5 N·m(M5) *

Electrical characteristics (at Tj=25°C unless otherwise specified)

Two thermistor terminals should be connected together, each other terminals should be connected together and shorted

All terminals should be connected together when isolation test will be done.

Absolute maximum ratings (at Tc=25°C unless otherwise specified)

Features

Maximum ratings and characteristics

Item

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Input capacitance

Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time

Lead resistance, terminal-chip*

Resistance

B value

Mounting *3

Terminals *4

between thermistor and others *2

Symbols

Rth(j-c)

Rth(c-f)*

(terminal)

(chip)

(terminal)

(chip)

R lead

Symbols

· Inverter for Motor drive

· AC and DC Servo drive amplifier

CES

GES

r(i)

off

GE(th)

CE(sat)

ies

Applications

:Recommendable value : 3.5 to 4.5 N·m(M6)

IGBT

FWD

With thermal compound

Conditions

T=25°C

T=100°C

T=25/50°C

=225A

=20V, I

=0V, V

=15V, I

=10V, V

=±15V

=0V

=900V

Symbol

-I

stg

CES

GES

iso

pulse

1700V / 225A 6 in one-package

=225mA

=225A

=1700V

=±20V

=0V, f=1MHz

Conditions

Continuous

AC:1min.

1 device

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

1ms

· Uninterruptible power supply

· Industrial machines, such as Welding machines

Characteristics

Min.

Tc=25°C

Tc=80°C

Tc=25°C

Tc=80°C

Characteristics

Min.

3305

–

465

–

4.5

–

Typ.

–

0.0167

Typ.

5000

3375

495

Rating

-40 to +125

–

6.5

2.30

2.65

2.05

2.40

0.58

0.32

0.10

0.80

0.15

2.05

2.25

1.80

2.00

0.3

1.0

1700

1040

+150

3400

±20

300

225

600

450

225

450

3.5

4.5

Max.

0.12

0.20

–

3450

Max.

600

520

3.0

8.5

2.80

–

2.55

–

1.20

0.60

–

1.50

0.30

2.80

–

2.55

–

0.6

–

Unit

°C

VAC

N·m

°C/W

Unit

µs

Related parts for 6MBI225U-170

6MBI225U-170 Summary of contents

Page 1

... IGBT Module U-Series Features · High speed switching · Voltage drive · Low inductance module structure Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Collector Power Dissipation Junction temperature ...

Page 2

... Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 600 500 VGE=20V 400 300 200 100 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 600 500 T j=25°C 400 300 200 100 Collector-Emitter voltage : VCE [V] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V Hz, Tj= 25° ...

Page 3

... Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=3Ω, Tj= 25°C 10000 toff 1000 100 10 0 100 Collector current : Switching time vs. Gate resistance (typ.) Vcc=900V, Ic=225A, VGE=±15V, Tj= 25°C 10000 1000 toff ton tr tf 100 10 1.0 Gate resistance : Rg [ Ω ] Switching loss vs. Gate resistance (typ.) Vcc=900V, Ic=225A, VGE=± ...

Page 4

... Forward current vs. Forward on voltage (typ.) 600 500 T j=25°C 400 300 200 100 Forward on voltage : Transient thermal resistance (max.) 1.000 0.100 0.010 0.001 0.001 0.010 Pulse width : Pw [ sec ] chip 1000 T j=125°C 100 100 FWD 10 IGBT 1 0.1 0.100 1.000 IGBT Module Reverse recovery characteristics (typ ...

Page 5

... Outline Drawings, mm M629 Equivalent Circuit Schematic [Inverter IGBT Module [Thermister ...

Related keywords

6MBI225U-170 datasheet
6MBI225U-170 data sheet
6MBI225U-170 pdf datasheet
6MBI225U-170 component
6MBI225U-170 part
6MBI225U-170 distributor
6MBI225U-170 RoHS
6MBI225U-170 datasheet download