6MBI75UA-120 FE, 6MBI75UA-120 Datasheet
6MBI75UA-120
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6MBI75UA-120 Summary of contents
Page 1
... IGBT Module U-Series Features · High speed switching · Voltage drive · Low inductance module structure Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Collector Power Dissipation Junction temperature ...
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... Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 200 VGE=20V 150 100 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 200 150 100 Collector-Emitter voltage : VCE [V] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V Hz, Tj= 25°C 100 ...
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... Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=9.1Ω, Tj= 25°C 1000 100 Collector current : Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=75A, VGE=±15V, Tj= 25°C 10000 1000 toff ton 100 Gate resistance : Rg [ Ω ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=75A, VGE=± ...
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... Forward current vs. Forward on voltage (typ.) 125 T j=25°C 100 Forward on voltage : Transient thermal resistance (max.) 10.000 1.000 0.100 0.010 0.001 0.001 0.010 Pulse width : Pw [ sec ] chip 1000 T j=125°C 100 100 FWD 10 IGBT 0.1 0.100 1.000 IGBT Module Reverse recovery characteristics (typ.) Vcc=600V, VGE=± ...
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... Outline Drawings, mm M636 Equivalent Circuit Schematic 25,26 25, 27,28 27, shows reference dimension 23,24 23,24 21,22 21, IGBT Module 15,16 15, 19,20 19,20 13,14 13,14 ...