7MBR10NE120 Fuji Electric, 7MBR10NE120 Datasheet - Page 2

• Manufacturer Part Number: 7MBR10NE120
• Description: IGBT(1200V/10A)
• Manufacturer: Fuji Electric

IGBT Module
Item
Item
Thermal resistance ( 1 device )
Contact thermal resistance
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Thermal Characteristics
Electrical characteristics (Tj=25°C unless without specified)
Equivalent Circuit Schematic
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Collector-Emitter voltage
Input capacitance
Switching time
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Switching time
Reverse current
Reverse recovery time
Forward voltage
Reverse current
*
I
I
V
V
-V
C
t
t
t
t
t
I
I
V
t
t
t
t
I
t
V
I
Symbol
CES
GES
on
r
off
f
rr
CES
GES
on
r
off
f
RRM
rr
RRM
Symbol
Rth(j-c)
Rth(c-f)
GE(th)
CE(sat)
CE(sat)
FM
ies
CE
V
V
V
V
-Ic=10A
V
V
I
V
R
I
V
V
I
V
I
V
R
V
I
V
Inverter IGBT
Inverter FRD
Brake IGBT
Converter Diode
With thermal compound
Condition
Condition
C
F
C
C
F
CE
CE
CE
GE
GE
CC
GE
CES
CE
CC
GE
R
R
G
=10A
G
=25A
=10A
=5A, V
=5A
=1200V
=1600V
=62 ohm
=120 ohm
=1200V, V
=0V, V
=20V, I
=15V, Ic=10A
=0V, V
=600V
=±15V
=0V, V
=600V
=±15V
=1200V, V
GE
GE
CE
GE
C
=15V
=10mA
=±20V
=10V, f=1MHz
=±20V
GE
GE
=0V
=0V
Min.
Min.
4.5
Characteristics
Characteristics
2100
Typ.
Typ.
7MBR10NE120
0.05
Max.
Max.
1.67
3.30
3.12
3.40
1.0
0.1
7.5
3.3
3.0
1.2
0.6
1.5
0.5
0.35
1.0
0.1
3.55
0.8
0.6
1.5
0.5
1
0.6
1.4
1.0
°C/W
Unit
Unit
mA
µA
V
V
V
pF
µs
µs
µs
µs
µs
mA
µA
V
µs
µs
µs
µs
mA
µs
V
mA