7MBR30NE060 Fuji Electric, 7MBR30NE060 Datasheet

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7MBR30NE060

Manufacturer Part Number
7MBR30NE060
Description
IGBT(600V/30A/PIM)
Manufacturer
Fuji Electric
Datasheet

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7MBR30NE060
IGBT MODULE
600V / 30A / PIM
· High Speed Switching
· Voltage Drive
· Low Inductance Module Structure
· Converter Diode Bridge Dynamic Brake Circuit
· Inverter for Motor Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Item
Operating junction temperature
Storage temperature
Isolation voltage
Mounting screw torque
*
1
Recommendable value : 1.3 to 1.7 N·m (M4)
Absolute maximum ratings (Tc=25°C unless without specified)
Features
Applications
Maximum ratings and characteristics
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage
Average forward current
Surge current
Repetitive peak reverse voltage
Non-Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I²t
(Non-Repetitive)
V
V
I
I
-I
P
V
V
I
I
P
V
I
I
V
V
I
I
T
T
V
Symbol
C
CP
C
CP
F(AV)
FSM
O
FSM
C
j
stg
CES
GES
C
CES
GES
C
RRM
RRM
RSM
iso
Continuous
1ms
1 device
Continuous
1ms
1 device
10ms
50Hz/60Hz sine wave
Tj=150°C, 10ms
Tj=150°C, 10ms
Condition
AC : 1 minute
Ra ting
-40 to +125
AC 2500
+150
600
±20
120
600
±20
120
600
800
900
350
648
30
60
30
30
60
50
50
1
1.7 *
1
IGBT Modules
Unit
V
V
A
A
A
W
V
V
A
A
W
V
A
A
V
V
A
A
A²s
°C
°C
V
N·m

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7MBR30NE060 Summary of contents

Page 1

... IGBT MODULE 600V / 30A / PIM Features · High Speed Switching · Voltage Drive · Low Inductance Module Structure · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25° ...

Page 2

... =50A F I RRM V =800V R Symbol Condition Inverter IGBT Inverter FRD Rth(j-c) Brake IGBT Converter Diode With thermal compound Rth(c-f) * NLU (Over current Limiting circuit) 7MBR30NE060 Characteristics Unit Min. Typ. Max. mA 1.0 µA 20 4.5 V 7.5 V 2.8 V 3.0 1980 pF µs 1.2 µs 0.6 µs 1.0 µ ...

Page 3

... Collector current vs. Collector-Emitter voltage Tj=125° Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=125° Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=300V, RG=82 ohm, VGE=±15V, Tj=125°C ...

Page 4

... Dynamic input characteristics Tj=25°C 50 100 150 Gate charge : Qg [nC] Reverse recovery characteristics trr, Irr, vs Forward current : IF [A] Reversed biased safe operating area > < < +VGE=15V, -VGE = 15V 125° ohm ...

Page 5

... Switching loss vs. Collector current Vcc=300V, RG=82 ohm, VGE=±15V Collector current : Ic [A] Converter Diode Forward current vs. Forward voltage 0.5 1.0 Forward voltage : 1.5 2.0 7MBR30NE060 Capacitance vs. Collector-Emitter voltage Tj=25° Collector-Emitter voltage : VCE [V] 35 ...

Page 6

... IGBT Module Outline Drawings, mm 7MBR30NE060 ...

Page 7

For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-733-1700 972-381-9991 Fax http://www.collmer.com ...

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