TSM3900D Taiwan Semiconductor Company, TSM3900D Datasheet

TSM3900D

Manufacturer Part Number

TSM3900D

Description

20V Dual N-Channel MOSFET

Manufacturer

Taiwan Semiconductor Company

Datasheet

1.TSM3900D.pdf (6 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TSM3900DCX6

Manufacturer:

TSC

Quantity:

63 000

Current page: 1 of 6
Download datasheet (409Kb)

Features

●

Application

●

Ordering Information

Absolute Maximum Rating

Thermal Performance

Notes:

a. Pulse width limited by the Maximum junction temperature

b. Surface Mounted on FR4 Board, t ≤ 5 sec.

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction Temperature

Operating Junction and Storage Temperature Range

Parameter

Junction to CaseThermal Resistance

Junction to Ambient Thermal Resistance (PCB mounted)

TSM3900DCX6 RF

Advance Trench Process Technology

High Density Cell Design for Ultra Low On-resistance

Load Switch

PA Switch

Part No.

SOT-26

Package

Pin Definition:

1. Gate 1

2. Source 2

3. Gate 2

SOT-26

(Ta = 25

6. Drain 1

5. Source 1

4. Drain 2

Packing

T&R

C unless otherwise noted)

Ta = 25

Ta = 70

a,b

PRODUCT SUMMARY

1/6

(V)

Symbol

RӨ

20V Dual N-Channel MOSFET

, T

STG

Dual N-Channel MOSFET

110 @ V

55 @ V

70 @ V

Block Diagram

DS(on)

-55 to +150

(mΩ)

Limit

= 4.5V

= 2.5V

+150

= 1.8V

2.0

1.3

1.6

±8

TSM3900D

www.DataSheet4U.com

Version: A07

2.0

1.5

1.0

Unit

C/W

(A)

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