TSM4410D Taiwan Semiconductor Company, TSM4410D Datasheet

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TSM4410D

Manufacturer Part Number
TSM4410D
Description
25V Dual N-Channel MOSFET
Manufacturer
Taiwan Semiconductor Company
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TSM4410DCS RLG
Manufacturer:
TSC/台半
Quantity:
20 000
Features
Application
Ordering Information
Absolute Maximum Rating
Thermal Performance
Notes:
a. Maximum DC current limited by the package
b. Surface Mounted on 1” x 1” FR4 Board, t ≤ 10 sec.
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
TSM4410DCS RL
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Load Switch
Dc-DC Converters and Motors Drivers
Part No.
SOP-8
Package
SOP-8
Pin Definition:
1. Source 1
2. Gate 1
3. Source 2
4. Gate 2
5, 6, 7, 8. Drain
(Ta = 25
2.5Kpcs / 13” Reel
Packing
o
C unless otherwise noted)
Ta = 25
Ta = 70
a,b
o
o
C
C
1/6
PRODUCT SUMMARY
V
DS
Symbol
Symbol
25
T
J
25V Dual N-Channel MOSFET
(V)
V
V
, T
I
P
T
I
DM
I
DS
GS
D
S
D
J
JC
JA
STG
Dual N-Channel MOSFET
Block Diagram
21 @ V
15 @ V
R
DS(on)
-55 to +150
Limit
Limit
GS
+150
GS
±20
2.3
1.3
25
25
50
30
50
(mΩ)
2
= 4.5V
= 10V
TSM4410D
www.DataSheet4U.com
Version: A07
I
D
o
o
Unit
Unit
C/W
C/W
10
o
o
W
8
(A)
V
V
A
A
A
C
C

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TSM4410D Summary of contents

Page 1

... High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● Dc-DC Converters and Motors Drivers Ordering Information Part No. Package TSM4410DCS RL SOP-8 Absolute Maximum Rating Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) ...

Page 2

... 10V iss V = 15V 0V oss f = 1.0MHz C rss t d(on 15V 15Ω 1A 10V, D GEN t d(off 16Ω 2/6 TSM4410D www.DataSheet4U.com Min Typ Max Unit 1.0 1.9 3 ±100 1 mΩ 0.85 1 14.7 26 ...

Page 3

... Electrical Characteristics Curve Output Characteristics On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature 25V Dual N-Channel MOSFET o ( unless otherwise noted) Source-Drain Diode Forward Voltage 3/6 TSM4410D www.DataSheet4U.com Transfer Characteristics Gate Charge Version: A07 ...

Page 4

... Electrical Characteristics Curve On-Resistance vs. Gate-Source Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 25V Dual N-Channel MOSFET o ( unless otherwise noted) 4/6 TSM4410D www.DataSheet4U.com Threshold Voltage Version: A07 ...

Page 5

... SOP-8 Mechanical Drawing DIM Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec Lot Code 5/6 TSM4410D www.DataSheet4U.com SOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 4.80 5.00 0.189 0.196 3.80 4.00 0.150 0.157 1.35 1 ...

Page 6

... The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 25V Dual N-Channel MOSFET Notice 6/6 TSM4410D www.DataSheet4U.com Version: A07 ...

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