TSM9426D Taiwan Semiconductor Company, TSM9426D Datasheet

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TSM9426D

Manufacturer Part Number
TSM9426D
Description
20V Dual N-Channel MOSFET w/ESD Protected
Manufacturer
Taiwan Semiconductor Company
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TSM9426DCS RLG
Manufacturer:
TSC/台半
Quantity:
20 000
Features
Application
Ordering Information
Absolute Maximum Rating
Thermal Performance
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Pulsed Drain Current, V
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
TSM9426DCS RL
Parameter
Junction to Foot (Drain) Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
ESD Protect 2KV
Specially Designed for Li-on Battery Packs
Battery Switch Application
Part No.
SOP-8
Package
GS
SOP-8
@4.5V
Pin Definition:
1. Source 1
2. Gate 1
3. Source 2
4. Gate 2
GS
@4.5V.
(Ta = 25
2.5Kpcs / 13” Reel
20V Dual N-Channel MOSFET w/ESD Protected
8. Drain 1
7. Drain 1
6. Drain 2
5. Drain 2
Packing
o
C unless otherwise noted)
Ta = 25
Ta = 75
a,b
Preliminary
o
o
C
C
1/4
PRODUCT SUMMARY
V
DS
20
Symbol
Symbol
T
(V)
J
V
V
, T
I
P
T
I
DM
I
DS
GS
D
S
D
J
STG
JF
JA
16 @ V
22 @ V
30 @ V
14 @ V
Dual N-Channel MOSFET
R
Block Diagram
DS(on)
-55 to +150
GS
GS
GS
GS
Limit
Limit
+150
1.28
62.5
(mΩ)
±12
9.4
20
40
45
= 4.5V
= 2.5V
= 1.8V
= 10V
3
2
TSM9426D
www.DataSheet4U.com
Version: Preliminary
I
D
o
o
Unit
Unit
9.4
C/W
C/W
o
o
W
8
6
4
V
V
A
A
A
(A)
C
C

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TSM9426D Summary of contents

Page 1

... High Density Cell Design for Ultra Low On-resistance ● ESD Protect 2KV Application ● Specially Designed for Li-on Battery Packs ● Battery Switch Application Ordering Information Part No. Package TSM9426DCS RL SOP-8 Absolute Maximum Rating ( Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V @4.5V. GS Pulsed Drain Current ...

Page 2

... iss V = 10V 0V oss f = 1.0MHz C rss t d(on 10V 1.2Ω 1A 10V, D GEN t d(off 3Ω 2/4 TSM9426D www.DataSheet4U.com Min Typ Max Unit 0.5 0.75 1 ± 12.6 16 mΩ 0.72 1 ...

Page 3

... SOP-8 Mechanical Drawing DIM Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec Lot Code 3/4 TSM9426D www.DataSheet4U.com SOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 4.80 5.00 0.189 0.196 3.80 4.00 0.150 0.157 1.35 1 ...

Page 4

... The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Preliminary 20V Dual N-Channel MOSFET w/ESD Protected Notice 4/4 TSM9426D www.DataSheet4U.com Version: Preliminary ...

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