TSM9428D Taiwan Semiconductor Company, TSM9428D Datasheet

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TSM9428D

Manufacturer Part Number
TSM9428D
Description
20V Dual N-Channel MOSFET
Manufacturer
Taiwan Semiconductor Company
Datasheet
Features
Application
Ordering Information
Absolute Maximum Rating
Thermal Performance
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 10 sec.
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Pulsed Drain Current, V
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Parameter
Junction to Foot (Drain) Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
TSM9428DCS RL
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Load Switch
PA Switch
Part No.
SOP-8
Package
GS
SOP-8
@4.5V
Pin Definition:
1. Source 1
2. Gate 1
3. Source 2
4. Gate 2
5, 6, 7, 8. Drain
GS
@4.5V.
(Ta = 25
2.5Kpcs / 13” Reel
Packing
o
C unless otherwise noted)
Ta = 25
Ta = 70
a,b
o
o
C
C
1/6
PRODUCT SUMMARY
V
DS
20
(V)
Symbol
Symbol
T
J
20V Dual N-Channel MOSFET
V
V
, T
I
P
T
I
DM
I
DS
GS
D
S
D
J
JF
JA
STG
Dual N-Channel MOSFET
30 @ V
40 @ V
Block Diagram
R
DS(on)
-55 to +150
GS
GS
(mΩ)
Limit
Limit
+150
= 4.5V
= 2.5V
1.7
2.5
1.6
20
±8
20
30
50
6
TSM9428D
www.DataSheet4U.com
Version: A07
I
D
6.0
5.2
o
o
Unit
Unit
C/W
C/W
(A)
o
o
W
V
V
A
A
A
C
C

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TSM9428D Summary of contents

Page 1

... Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information Part No. Package TSM9428DCS RL SOP-8 Absolute Maximum Rating Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V @4.5V. GS Pulsed Drain Current, V @4.5V GS ...

Page 2

... 4. iss V = 10V 0V oss f = 1.0MHz C rss t d(on 10V 10Ω 1A 4.5V, D GEN t d(off 6Ω 2/6 TSM9428D www.DataSheet4U.com Min Typ Max Unit 0.45 0.65 0. ±100 1 mΩ 1 ...

Page 3

... Electrical Characteristics Curve Output Characteristics On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature 20V Dual N-Channel MOSFET o ( unless otherwise noted) Source-Drain Diode Forward Voltage 3/6 TSM9428D www.DataSheet4U.com Transfer Characteristics Gate Charge Version: A07 ...

Page 4

... Electrical Characteristics Curve On-Resistance vs. Gate-Source Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 20V Dual N-Channel MOSFET ( unless otherwise noted) 4/6 TSM9428D www.DataSheet4U.com Threshold Voltage Version: A07 ...

Page 5

... SOP-8 Mechanical Drawing DIM Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec Lot Code 5/6 TSM9428D www.DataSheet4U.com SOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 4.80 5.00 0.189 0.196 3.80 4.00 0.150 0.157 1.35 1 ...

Page 6

... The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 20V Dual N-Channel MOSFET Notice 6/6 TSM9428D www.DataSheet4U.com Version: A07 ...

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