TSM9966D Taiwan Semiconductor Company, TSM9966D Datasheet
TSM9966D
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TSM9966D Summary of contents
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... High Density Cell Design for Ultra Low On-resistance Application ● Specially Designed for Li-on Battery Packs ● Battery Switch Application Ordering Information Part No. Package TSM9966DCX6 RF SOT-26 Absolute Maximum Rating Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) ...
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... 10V 1.7A 10V 1.0MHz V = 10V 6Ω 1A 4.5V, D GEN 2/6 TSM9966D 20V Dual N-Channel MOSFET Min Typ Max DSS V 0 GS(TH ±100 GSS 1.0 DSS D(ON DS(ON ...
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... Electrical Characteristics Curve Output Characteristics www.DataSheet4U.com On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature 20V Dual N-Channel MOSFET o ( unless otherwise noted) Transfer Characteristics Source-Drain Diode Forward Voltage 3/6 TSM9966D Gate Charge Version: A07 ...
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... Electrical Characteristics Curve On-Resistance vs. Gate-Source Voltage www.DataSheet4U.com Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 20V Dual N-Channel MOSFET o ( unless otherwise noted) 4/6 TSM9966D Threshold Voltage Version: A07 ...
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... Device Code Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec Lot Code 5/6 TSM9966D SOT-26 DIMENSION MILLIMETERS INCHES MIN MIN TYP MAX TYP 0.95 BSC 0.0374 BSC 1.9 BSC 0.0748 BSC 0.1024 ...
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... The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 20V Dual N-Channel MOSFET Notice 6/6 TSM9966D Version: A07 ...