LT1168 Linear Technology, LT1168 Datasheet - Page 5

• Manufacturer Part Number: LT1168
• Description: Low Power/ Single Resistor Gain Programmable/ Micropower Precision Instrumentation Amplifier
• Manufacturer: Linear Technology

ELECTRICAL CHARACTERISTICS
The
otherwise noted. (Note 5)
SYMBOL PARAMETER
V
V
V
V
V
V
V
I
I
I
I
V
CMRR
PSRR
I
V
I
SR
V
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be imparied.
Note 2: If the input voltage exceeds the supplies, the input current should
be limited to less than 20mA.
Note 3: A heat sink may be required to keep the junction temperature
below absolute maximum.
Note 4: The LT1168AC/LT1168C are guaranteed functional over the
operating temperature range of – 40 C and 85 C.
Note 5: The LT1168AC/LT1168C are guaranteed to meet specified
performance from 0 C to 70 C. The LT1168AC/LT1168C are designed,
characterized and expected to meet specified performance from – 40 C
and 85 C but are not tested or QA sampled at these temperatures. The
LT1168AI/LT1168I are guaranteed to meet specified performance from
– 40 C to 85 C.
OS
OS
B
B
S
OUT
OST
OSI
OSIH
OSO
OSOH
OSI
OSO
CM
OUT
REF
/T
/T
/T
/T
denotes the specifications which apply over the – 40 C T
Total Input Referred Offset Voltage
Input Offset Voltage
Input Offset Voltage Hysteresis
Output Offset Voltage
Output Offset Voltage Hysteresis (Notes 7, 10)
Input Offset Drift (RTI)
Output Offset Drift
Input Offset Current
Input Offset Current Drift
Input Bias Current
Input Bias Current Drift
Input Voltage Range
Common Mode
Rejection Ratio
Power Supply
Rejection Ratio
Supply Current
Output Voltage Swing
Output Current
Slew Rate
Voltage Range
CONDITIONS (Note 6)
(Notes 7, 10)
(Note 9)
(Note 9)
V
V
1k Source Imbalance,
V
V
V
V
(Note 9)
S
S
CM
S
S
S
= 2.3V to 5V
= 5V to 18V
= 2.3V to 18V
= 2.3V to 5V
= 5V to 18V
V
G = 1
G = 10
G = 100
G = 1000
G = 1
G = 10
G = 100
G = 1000
= 0V to 10V
OST
= V
OSI
+ V
OSO
/G
A
85 C temperature range. V
–V
–V
–V
–V
–V
Note 6: Typical parameters are defined as the 60% of the yield parameter
distribution.
Note 7: Does not include the tolerance of the external gain resistor R
Note 8: This parameter is measured in a high speed automatic tester that
does not measure the thermal effects with longer time constants. The
magnitude of these thermal effects are dependent on the package used,
heat sinking and air flow conditions.
Note 9: This parameter is not 100% tested.
Note 10: Hysteresis in offset voltage is created by package stress that
differs depending on whether the IC was previously at a higher or lower
temperature. Offset voltage hysteresis is always measured at 25 C, but
the IC is cycled to 85 C I-grade (or 70 C C-grade) or – 40 C I-grade
(0 C C-grade) before successive measurement. 60% of the parts will
pass the typical limit on the data sheet.
MIN
0.22
S
S
S
S
S
114
116
100
120
125
128
86
98
15
+ 2.1
+ 2.1
+ 1.4
+ 1.6
+ 1.6
LT1168AI
0.05
0.41
TYP
180
110
120
105
118
133
112
125
132
140
420
3.0
0.8
0.3
1.4
20
30
90
20
+V
+V
+V
+V
+V
MAX
S
S
S
S
S
500
550
500
650
0.3
75
5
– 1.3 –V
– 1.4 –V
– 1.3 –V
– 1.5 –V
– 1.6 –V
S
= 15V, V
0.22
MIN
S
S
S
S
S
112
112
115
120
125
81
95
95
15
+ 2.1
+ 2.1
+ 1.4
+ 1.6
+ 1.6
CM
LT1168I
= 0V, R
0.06
0.42
TYP
200
120
220
105
118
133
112
125
132
140
420
3.0
0.3
1.4
25
30
90
20
1
L
+V
+V
+V
+V
+V
= 10k unless
MAX
100
600
700
800
S
S
650
S
S
S
0.4
6
LT1168
– 1.3
– 1.4
– 1.3
– 1.5
– 1.6
UNITS
G
pA/ C
pA/ C
.
5
V/ C
V/ C
V/ s
mA
pA
pA
dB
dB
dB
dB
dB
dB
dB
dB
V
V
V
V
V
V
A
V
V
V